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Vgs - Gate-Source Voltage :
Number of Channels :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
SQJ158EP-T1_GE3
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RFQ
2,990
In-stock
Siliconix / Vishay MOSFET N-Channel 60V PowerPAK SO-8L +/- 20 V SMD/SMT PowerPAK-SO-8L - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 23 A 0.0272 Ohms 1.5 V 30 nC Enhancement
SQJA62EP-T1_GE3
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RFQ
3,000
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Siliconix / Vishay MOSFET N-Channel 60V PowerPAK SO-8L +/- 20 V SMD/SMT PowerPAK-SO-8L - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 75 A 0.0037 Ohms 1.5 V 85 nC Enhancement
SQJA90EP-T1_GE3
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RFQ
3,000
In-stock
Siliconix / Vishay MOSFET N-Channel 80V PowerPAK SO-8L +/- 20 V SMD/SMT PowerPAK-SO-8L - 55 C + 175 C Reel 1 Channel Si N-Channel 80 V 60 A 0.0063 Ohms 2.5 V 55 nC Enhancement
SQJA92EP-T1_GE3
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RFQ
3,000
In-stock
Siliconix / Vishay MOSFET N-Channel 80V PowerPAK SO-8L +/- 20 V SMD/SMT PowerPAK-SO-8L - 55 C + 175 C Reel 1 Channel Si N-Channel 80 V 57 A 0.0078 Ohms 2.5 V 45 nC Enhancement
SQJB42EP-T1_GE3
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RFQ
3,000
In-stock
Siliconix / Vishay MOSFET Dual N-Channel 40V PowerPAK +/- 20 V, +/- 20 V SMD/SMT PowerPAK-SO-8L - 55 C + 175 C Reel 2 Channel Si N-Channel 40 V, 40 V 30 A, 30 A 0.0079 Ohms, 0.0079 Ohms 2.5 V, 2.5 V 30 nC, 30 nC Enhancement
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