- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Maximum Operating Temperature | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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400
In-stock
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Toshiba | MOSFET N-Ch 800V 1150pF 19nC 9.5A 40W | 20 V | Through Hole | TO-220SIS-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 9.5 A | 460 mOhms | 3 V | 19 nC | Enhancement | ||
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GET PRICE |
400
In-stock
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Toshiba | MOSFET N-Ch 800V 1400pF 23nC 11.5A 45W | 20 V | Through Hole | TO-220SIS-3 | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11.5 A | 380 mOhms | 3 V | 23 nC | Enhancement |
