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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$7.030
RFQ
290
In-stock
STMicroelectronics MOSFET N CH 950V 10A I2PAKFP TO-262-3 Full Pack, I²Pak SuperMESH3™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 950V 10A (Tc) 850 mOhm @ 5A, 10V 5V @ 100µA 51nC @ 10V 1620pF @ 100V 10V ±30V 40W (Tc)
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Per Unit
$3.540
RFQ
1,499
In-stock
STMicroelectronics MOSFET N-CH 650V 10A I2PAKFP TO-262-3 Full Pack, I²Pak SuperMESH3™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 650V 10A (Tc) 1 Ohm @ 3.6A, 10V 4.5V @ 100µA 42nC @ 10V 1180pF @ 25V 10V ±30V 35W (Tc)
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Per Unit
$2.800
RFQ
1,480
In-stock
STMicroelectronics MOSFET N-CH 600V 10A I2PAK FP TO-262-3 Full Pack, I²Pak SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 600V 10A (Tc) 750 mOhm @ 4.5A, 10V 4.5V @ 250µA 70nC @ 10V 1370pF @ 25V 10V ±30V 35W (Tc)
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Per Unit
$2.470
RFQ
1,500
In-stock
STMicroelectronics MOSFET N-CH 650V 10A I2PAKFP TO-262-3 Full Pack, I²Pak MDmesh™ M2 Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 650V 10A (Tc) 430 mOhm @ 5A, 10V 4V @ 250µA 17nC @ 10V 590pF @ 100V 10V ±25V 25W (Tc)
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