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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$8.200
RFQ
500
In-stock
STMicroelectronics MOSFET N-CH 650V 5.4A I2PAKFP TO-262-3 Full Pack, I²Pak SuperMESH3™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 650V 5.4A (Tc) 1.3 Ohm @ 2.7A, 10V 4.5V @ 50µA 33nC @ 10V 880pF @ 50V 10V ±30V 30W (Tc)
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Per Unit
$2.220
RFQ
1,505
In-stock
STMicroelectronics MOSFET N CH 620V 5.5A I2PAKFP TO-262-3 Full Pack, I²Pak SuperMESH3™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 620V 5.5A (Tc) 1.2 Ohm @ 2.8A, 10V 4.5V @ 50µA 34nC @ 10V 875pF @ 50V 10V ±30V 30W (Tc)
Default Photo
Per Unit
$1.880
RFQ
1,414
In-stock
STMicroelectronics MOSFET N CH 620V 3.8A I2PAKFP TO-262-3 Full Pack, I²Pak SuperMESH3™ Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 620V 3.8A (Tc) 2 Ohm @ 1.9A, 10V 4.5V @ 50µA 22nC @ 10V 550pF @ 50V 10V ±30V 25W (Tc)
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