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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$5.720
RFQ
1,500
In-stock
STMicroelectronics MOSFET N-CH 100V 46A I2PAKFP TO-262-3 Full Pack, I²Pak STripFET™ III Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 100V 46A (Tc) 9.6 mOhm @ 23A, 10V 4V @ 250µA 57nC @ 10V 3305pF @ 25V 10V ±20V 35W (Tc)
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Per Unit
$5.340
RFQ
297
In-stock
STMicroelectronics MOSFET N-CH 60V 80A I2PAKFP TO-262-3 Full Pack, I²Pak DeepGATE™, STripFET™ VI Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I2PAKFP (TO-281) 0 1 N-Channel - 60V 80A (Tc) 3 mOhm @ 60A, 10V 4V @ 250µA 183nC @ 10V 11400pF @ 25V 10V ±20V 41.7W (Tc)
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