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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Diodes Incorporated MOSFET N-CH 30V 7.44A 8DFN 8-PowerUDFN - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN3030-8 0 3000 N-Channel   - 30V 7.44A (Ta) 17 mOhm @ 9A, 10V 1.5V @ 250µA 9.47nC @ 5V 798pF @ 10V 4.5V, 10V ±25V 940mW (Ta)
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Diodes Incorporated MOSFET 2N-CH 20V 5.2A 8UDFN 8-PowerUDFN - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active U-DFN3030-8 0 3000 2 N-Channel (Dual) Common Drain 770mW Logic Level Gate 20V 5.2A 18 mOhm @ 6A, 4.5V 1.1V @ 250µA 16nC @ 4.5V 1472pF @ 10V      
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6,000
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Diodes Incorporated MOSFET 2N-CH 20V 6.1A DFN 8-PowerUDFN - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active U-DFN3030-8 0 3000 2 N-Channel (Dual) Common Drain 920mW Logic Level Gate 20V 6.1A 23 mOhm @ 6.5A, 4.5V 1.05V @ 250µA 8.8nC @ 4.5V 143pF @ 10V      
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