- Mounting Type :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 40V 240A D2PAK | TO-262-3 Wide Leads | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-262-3 Wide | 0 | 150 | N-Channel | - | 40V | 240A (Tc) | 1.4 mOhm @ 195A, 10V | 4V @ 250µA | 210nC @ 10V | 9450pF @ 32V | 10V | ±20V | 375W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 295A TO262WL | TO-262-3 Wide Leads | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262-3 Wide | 0 | 150 | N-Channel | - | 40V | 240A (Tc) | 1.8 mOhm @ 187A, 10V | 4V @ 250µA | 225nC @ 10V | 7978pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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Infineon Technologies | MOSFET N-CH 24V 240A TO-262 | TO-262-3 Wide Leads | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262-3 Wide | 0 | 1 | N-Channel | - | 24V | 240A (Tc) | 1.3 mOhm @ 195A, 10V | 4V @ 250µA | 180nC @ 10V | 7630pF @ 19V | 10V | ±20V | 300W (Tc) |
