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Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 40V 14A DIRECTFET DirectFET™ Isometric SC HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active DIRECTFET™ SC 0 4800 N-Channel - 40V 14A (Ta) 6.6 mOhm @ 35A, 10V 2.5V @ 50µA 33nC @ 4.5V 2020pF @ 25V 4.5V, 10V ±16V 2.2W (Ta), 41W (Tc)
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Infineon Technologies MOSFET N-CH 40V 14A DIRECTFET DirectFET™ Isometric SC HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active DIRECTFET™ SC 0 4800 N-Channel - 40V 14A (Ta) 6.95 mOhm @ 33A, 10V 4V @ 50µA 45nC @ 10V 1700pF @ 25V 10V ±20V 2.5W (Ta), 41W (Tc)
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Infineon Technologies MOSFET N-CH 100V 5.9A DIRECTFET DirectFET™ Isometric SC HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active DIRECTFET™ SC 0 4800 N-Channel - 100V 5.9A (Ta), 24A (Tc) 31 mOhm @ 14A, 10V 5V @ 50µA 21nC @ 10V 910pF @ 25V 10V ±20V 2.5W (Ta), 41W (Tc)
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