- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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5,764
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -30V 2.3A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 2.3 A | 165 mOhms | 6.9 nC | ||||||
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4,295
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL PCh -20V 2.3A | 12 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 250 mOhms | 9.3 nC | ||||||
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2,469
In-stock
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Infineon Technologies | MOSFET DUAL -20V P-CH HEXFET 7.5mOhms 63nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 20 V | - 2.3 A | 250 mOhms | 9.3 nC | Enhancement | |||
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25,000
In-stock
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Fairchild Semiconductor | MOSFET Dual PCh PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 2.3 A | 138 mOhms | Enhancement | PowerTrench | |||
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GET PRICE |
829
In-stock
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IR / Infineon | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 2.3 A | 250 mOhms | 6.9 nC | Enhancement |
