- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
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11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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52,390
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL NCh 20V 5.2A | 12 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 20 V | 5.2 A | 50 mOhms | 13.3 nC | |||||||
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5,000
In-stock
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Fairchild Semiconductor | MOSFET SO-8 SGL P-CH -30V | 25 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 50 mOhms | Enhancement | PowerTrench | ||||
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1,737
In-stock
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Fairchild Semiconductor | MOSFET 100V 4.5a .3 Ohms/VGS=1V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4.5 A | 50 mOhms | Enhancement | UltraFET | ||||
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1,717
In-stock
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Diodes Incorporated | MOSFET Dl 60V N-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 5 A | 50 mOhms | Enhancement | |||||
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3,015
In-stock
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Infineon Technologies | MOSFET 20V DUAL N-CH HEXFET 50mOhms 13.3nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 20 V | 5.2 A | 50 mOhms | 13.3 nC | Enhancement | ||||
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10,010
In-stock
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Nexperia | MOSFET MOSFET P-CH FET 20V 7.9A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.9 A | 50 mOhms | ||||||
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2,362
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 30mOhms 19nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 7 A | 50 mOhms | 19 nC | Enhancement | ||||
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2,741
In-stock
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IR / Infineon | MOSFET MOSFT 30V 7A 30mOhm 18nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 50 mOhms | 18 nC | |||||||
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GET PRICE |
729
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5.7 A | 50 mOhms | Enhancement | |||||
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GET PRICE |
814
In-stock
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Diodes Incorporated | MOSFET 40V N/P-Channel Enhancement MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 5.2 A | 50 mOhms | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 20V DUAL N / P CH 12V VGS MAX | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 20 V | 4.3 A | 50 mOhms | 13.3 nC | Enhancement |