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Vgs - Gate-Source Voltage :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
NTR1P02LT3G
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15,287
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onsemi MOSFET PFET SOT23 20V .160R 12 V SMD/SMT SOT-23-3     Reel 1 Channel Si P-Channel - 20 V - 1.3 A 135 mOhms   5.5 nC    
DMG3418L-7
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RFQ
4,541
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Diodes Incorporated MOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W 12 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 4 A 50 mOhms 1.5 V 5.5 nC Enhancement  
PMV100ENEAR
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RFQ
2,721
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Nexperia MOSFET PMV100ENEA/TO-236AB/REEL 7" Q3 20 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 3 A 54 mOhms 1 V 5.5 nC Enhancement  
DMG2301L-7
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RFQ
161,000
In-stock
Diodes Incorporated MOSFET MOSFET BVDSS +/- 8 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 20 V - 3 A 120 mOhms - 1.2 V 5.5 nC Enhancement  
DMG3418L-13
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RFQ
Diodes Incorporated MOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W 12 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 4 A 50 mOhms 1.5 V 5.5 nC Enhancement PowerDI
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