- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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9,586
In-stock
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Texas instruments | MOSFET N-CH NexFET Pwr MOSFET | 8 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 1.6 A | 34 mOhms | 800 mV | 2.3 nC | Enhancement | NexFET | |||
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500
In-stock
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Texas instruments | MOSFET 12 V N-ChanNexFET? Power MOSFET 4-DSBGA | 10 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 1.6 A | 14.6 mOhms | 700 mV | 7.8 nC | Enhancement |
