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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,591
In-stock
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Diodes Incorporated | MOSFET 30V N Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.6 A | 65 mOhms | Enhancement | ||||
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4,263
In-stock
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Diodes Incorporated | MOSFET 30V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3 A | 180 mOhms | Enhancement | ||||
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3,813
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL SOT-26 | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.3 A | 32 mOhms | 9.2 nC | ||||
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2,700
In-stock
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onsemi | MOSFET NCH+PCH 1.8V DRIVE SERIES | 10 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 400 mA | 280 mOhms | 1.58 nC | ||||
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2,560
In-stock
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Diodes Incorporated | MOSFET 900mW 30Vdss | 8 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.2 A | 60 mOhms | Enhancement | ||||
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2,900
In-stock
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Diodes Incorporated | MOSFET NMOS-SINGLE | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.9 A | 25 mOhms | 2.1 V | 13 nC | Enhancement | ||
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2,365
In-stock
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Diodes Incorporated | MOSFET 30V 4A N-CHANNEL | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 64 mOhms | Enhancement |
