- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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12,981
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1 A | 190 mOhms | 2 nC | Enhancement | ||||||
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4,781
In-stock
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Vishay Semiconductors | MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified | +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.7 A | 0.045 Ohms | 0.6 V | 5.2 nC | Enhancement | TrenchFET | ||||
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17,914
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1 A | 190 mOhms | 2.8 V | 2 nC | Enhancement | |||||
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7,326
In-stock
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onsemi | MOSFET NCH 1.7A 30V SOT-363 | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 1.8 A | 188 mOhms | 2.6 V | 2 nC | ||||||
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8,622
In-stock
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Diodes Incorporated | MOSFET 30V DUAL N-CH MOSFET | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 260 mA | 2.8 Ohms | 1.5 V | 0.87 nC | Enhancement | |||||
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5,961
In-stock
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Nexperia | MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 350 mA | 1.4 Ohms | Enhancement | |||||||
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4,612
In-stock
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Nexperia | MOSFET NX3020NAKS/SC-88/REEL 7" Q1/T1 | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 180 mA | 2.7 Ohms | 1.2 V | 0.34 nC | Enhancement | ||||||
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3,558
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 120 mOhms | 1.2 V | 600 pC | Enhancement | |||||
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5,736
In-stock
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onsemi | MOSFET POWER MOSFET | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 350 mA | 3.7 Ohms | ||||||||
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1,765
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 120 mOhms | 1.2 V | 600 pC | Enhancement | |||||
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5,584
In-stock
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Toshiba | MOSFET SM Sig N-CH MOS 0.1A 30V -20 VGSS | 20 V | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel | 30 V | 100 mA | 3.6 Ohms | ||||||||||
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8,900
In-stock
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onsemi | MOSFET NFET 30V 250MA 1.5OH | SMD/SMT | SOT-363-6 | Reel | Si | N-Channel | 30 V | 250 mA | 1.5 Ohms |