- Manufacture :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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7,330
In-stock
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onsemi | MOSFET PCH+NCH 2.5V DRIVE SERIES | 10 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 350 mA | 3.7 Ohms | 1.58 nC | |||||
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4,531
In-stock
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Nexperia | MOSFET 30/30V, 350/200 MA N/P-CH TRENCH MOSFET | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 350 mA, - 200 mA | 1.4 Ohms | - 0.9 V, 0.9 V | 0.52 nC | Enhancement | ||||
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4,012
In-stock
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Toshiba | MOSFET N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 400 mA | 4 Ohms | 1.8 V, - 1.8 V |
