- Manufacture :
- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,781
In-stock
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Vishay Semiconductors | MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified | +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.7 A | 0.045 Ohms | 0.6 V | 5.2 nC | Enhancement | TrenchFET | |||
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3,558
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 120 mOhms | 1.2 V | 600 pC | Enhancement | ||||
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1,765
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 120 mOhms | 1.2 V | 600 pC | Enhancement |
