- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 11 A (1)
- - 13 A (1)
- - 14 A (1)
- - 35 A (1)
- - 55 A (1)
- 110 A (2)
- 13 A (3)
- 140 A (4)
- 150 A (1)
- 16 A (1)
- 170 A (1)
- 180 A (2)
- 20 A (1)
- 200 A (3)
- 21 A (1)
- 24 A (1)
- 32 A (1)
- 33 A (1)
- 34 A (1)
- 44 A (3)
- 47 A (1)
- 48 A (2)
- 54 A (1)
- 58 A (2)
- 6.3 A (1)
- 60 A (1)
- 61 A (2)
- 62 A (5)
- 7.44 A (1)
- 7.5 A (1)
- 73 A (2)
- 75 A (1)
- 76 A (3)
- 80 A (6)
- 84 A (2)
- 85 A (1)
- 9.7 A (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
64 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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|
GET PRICE |
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Fairchild Semiconductor | MOSFET 40V N-Ch PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 54 A | 11 mOhms | Enhancement | PowerTrench | |||||
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IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 11 mOhms | 4.5 V | 540 nC | Enhancement | Linear L2 | ||||
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IXYS | MOSFET 180 Amps 150V 0.011 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 11 mOhms | Enhancement | HyperFET | ||||||
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IR / Infineon | MOSFET MOSFT 20V 16A 6.5mOhm 41nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 16 A | 11 mOhms | 2 V | 41 nC | ||||||
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 11mOhms 22nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 11 mOhms | 22 nC | Enhancement | ||||||
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IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHV, HiPerFET | ||||
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STMicroelectronics | MOSFET N-channel 75 V .0095 80A STripFet 2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 11 mOhms | Enhancement | |||||||
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Fairchild Semiconductor | MOSFET PT8PZ 30/25V VIS with 2.05x2.05 PQFN pkg | 25 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 11 mOhms | - 2.6 V | 33 nC | Enhancement | PowerTrench | ||||
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 73 A | 11 mOhms | Enhancement | PowerTrench | ||||||
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22,650
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onsemi | MOSFET SO-8 N-CH 1&2 30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.3 A | 11 mOhms | Enhancement | PowerTrench SyncFET | |||||
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Fairchild Semiconductor | MOSFET COMPUTING MOSFET | 12 V, 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 13 A | 11 mOhms | 1.5 V, 2 V | 21 nC, 64 nC | Power Stage PowerTrench | |||||
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1,483
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Fairchild Semiconductor | MOSFET 75V N-Channel MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 75 V | 75 A | 11 mOhms | Enhancement | |||||||
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276
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Fairchild Semiconductor | MOSFET 100V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 11 mOhms | 2 V | 81 nC | Enhancement | |||||
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3,008
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Infineon Technologies | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 11 mOhms | Enhancement | OptiMOS | ||||||
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 TO252,2.5K | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 14 A | 11 mOhms | 47.5 nC | Enhancement | ||||||
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800
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onsemi | MOSFET NFET D2PAK 100V 76A 13MOH | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 76 A | 11 mOhms | 2 V to 4 V | 120 nC | ||||||
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1,852
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Infineon Technologies | MOSFET N-Ch 100V 73A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 73 A | 11 mOhms | 2.2 V | 30 nC | Enhancement | |||||
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679
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IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 110 A | 11 mOhms | 4.5 V | 150 nC | Enhancement | HiPerFET | ||||
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1,618
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Fairchild Semiconductor | MOSFET 40V 50A N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 21 A | 11 mOhms | Enhancement | PowerTrench | ||||||
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1,158
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Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH 30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.5 A | 11 mOhms | Enhancement | PowerTrench | ||||||
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320
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STMicroelectronics | MOSFET N-Ch, 75V-0.0095ohms 80A | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 11 mOhms | 3 V | 117 nC | Enhancement | |||||
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364
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 11mOhms 80nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 84 A | 11 mOhms | 2 V to 4 V | 80 nC | Enhancement | |||||
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET | +/- 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 40 V | - 35 A | 11 mOhms | - 2 V | 47.5 nC | Enhancement | ||||||
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STMicroelectronics | MOSFET N-Ch, 75V-0.0095ohms 80A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 11 mOhms | 3 V | Enhancement | ||||||
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278
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Infineon Technologies | MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 58 A | 11 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | ||||
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522
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Infineon Technologies | MOSFET MOSFT 55V 84A 11mOhm 80nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 85 A | 11 mOhms | 4 V | 120 nC | ||||||
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965
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.7 A | 11 mOhms | 1.05 V | 18.85 nC | Enhancement | |||||
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455
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Infineon Technologies | MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 58 A | 11 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | ||||
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In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 62 A | 11 mOhms | 4 V | 40 nC | Enhancement | |||||
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231
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 61 A | 11 mOhms | 43 nC | Enhancement |