- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
36 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,702
In-stock
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Fairchild Semiconductor | MOSFET 30/20V Nch Power Trench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 25 A | 2.8 mOhms | Enhancement | PowerTrench | ||||||
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805
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 210 A | 2.8 mOhms | 2 V | 79 nC | Enhancement | PowerTrench | ||||
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3,000
In-stock
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Fairchild Semiconductor | MOSFET 25/12V Dual Cool PowerTrench MOSFET | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 28 A | 2.8 mOhms | PowerTrench SyncFET | ||||||||
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4,898
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.8 mOhms | 2.1 V | 41 nC | Enhancement | |||||
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2,296
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.8 mOhms | Enhancement | |||||||
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1,701
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 210 A | 2.8 mOhms | 209 nC | Enhancement | ||||||
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766
In-stock
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onsemi | MOSFET NFET D2PAK 60V 169A 3MOHM | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 220 A | 2.8 mOhms | |||||||||
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1,989
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 135 A | 2.8 mOhms | 1.5 V | 150 nC | Enhancement | |||||
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4,973
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.8 mOhms | 2.1 V | 41 nC | Enhancement | OptiMOS | ||||
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1,306
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 49 A | 2.8 mOhms | 1.7 V | 16 nC | PowerTrench SyncFET | |||||
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346
In-stock
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IR / Infineon | MOSFET 100V N-CH 142A 3.5 mOhm 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 2.8 mOhms | 2 V | 200 nC | Enhancement | Directfet | ||||
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2,566
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.8 mOhms | 1 V | 52 nC | Enhancement | OptiMOS | ||||
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754
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | - 180 A | 2.8 mOhms | 190 nC | OptiMOS | ||||||
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2,380
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 22A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 2.8 mOhms | 1 V | 60 nC | Enhancement | OptiMOS | ||||
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226
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 110 A | 2.8 mOhms | 3 V | 131 nC | Enhancement | PowerTrench | ||||
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157
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.8 mOhms | Enhancement | OptiMOS | ||||||
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479
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.8 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||||
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189
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 120A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.8 mOhms | 2.2 V | 133 nC | Enhancement | |||||
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3,990
In-stock
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Texas instruments | MOSFET 100V N-CH NexFET Pwr MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 150 A | 2.8 mOhms | 2.2 V | 98 nC | Enhancement | |||||
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290
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 2.8 mOhms | 2.1 V | 118 nC | Enhancement | NexFET | ||||
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869
In-stock
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Texas instruments | MOSFET 30V N Channel NexFET Power MOSFET | 10 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 2.8 mOhms | 1.1 V | 14.1 nC | NexFET | |||||
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250
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | SON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.8 mOhms | 1.5 V | 59 nC | Enhancement | NexFET | ||||
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4,000
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET DIRECTFET L8 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 2.8 mOhms | 200 nC | Enhancement | Directfet | |||||
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4,999
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 22A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 2.8 mOhms | 1 V | 60 nC | Enhancement | OptiMOS | ||||
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2,500
In-stock
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STMicroelectronics | MOSFET N-channel 30 V, 2.8 mOhm typ., 80 A STripFET H7 Power M... | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 30 V | 80 A | 2.8 mOhms | 1.2 V | 13.7 nC | Enhancement | STripFET | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.0028 Ohm typ., 80 A STripFET F7 Power ... | 20 V | SMD/SMT | H2PAK-6 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 80 A | 2.8 mOhms | 2 V | 55 nC | Enhancement | ||||||
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VIEW | Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench SyncFET | 12 V | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 60 A | 2.8 mOhms | 42 nC | Enhancement | PowerTrench SyncFET | |||||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 210 A | 2.8 mOhms | 209 nC | Enhancement | ||||||
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VIEW | IXYS | MOSFET 220 Amps 40V 0.0035 Rds | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 220 A | 2.8 mOhms | 4 V | 112 nC | Enhancement | TrenchT2 | ||||
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4,825
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.8 mOhms | 1 V | 52 nC | Enhancement | OptiMOS |