- Mounting Style :
- Package / Case :
-
- DFN2020MD-6 (1)
- DFN3030-8 (1)
- Power-33-8 (2)
- Power-56-8 (2)
- PowerDI3333-8 (4)
- POWERDI5060-8 (1)
- SO-8 (5)
- SO-FL-8 (2)
- SOIC-8 (1)
- SOT-227-4 (1)
- TDSON-8 (7)
- TO-220-3 (8)
- TO-220FP-3 (3)
- TO-247-3 (2)
- TO-252-3 (9)
- TO-263-3 (4)
- TO-263-7 (1)
- TO-264-3 (2)
- TO-268-3 (1)
- TO-3PN-3 (1)
- TSDSON-8 (1)
- U-DFN2020-E-6 (1)
- U-DFN2020-F-6 (1)
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 12 A (1)
- - 12.5 A (1)
- - 120 A (3)
- - 140 A (2)
- - 15.2 A (1)
- - 20 A (1)
- - 60 A (1)
- 10 A (1)
- 100 A (2)
- 105 A (1)
- 11 A (1)
- 11.2 A (1)
- 11.6 A (1)
- 116 A (1)
- 12 A (4)
- 12.9 A (1)
- 140 A (1)
- 16.7 A (2)
- 170 A (2)
- 180 A (1)
- 22 A (1)
- 30 A (1)
- 35 A (1)
- 39 A (4)
- 40 A (1)
- 43 A (1)
- 5.3 A (1)
- 53 A (1)
- 59 A (2)
- 60 A (1)
- 7 A (1)
- 7.62 A (1)
- 70 A (2)
- 71 A (2)
- 75 A (4)
- 80 A (2)
- 85 A (1)
- 89 A (2)
- 9.5 A (1)
- 90 A (2)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10.8 nC (2)
- 110 nC (1)
- 12 nC, 21 nC (1)
- 14 nC (1)
- 15 nC (2)
- 16.1 nC (1)
- 17 nC (1)
- 17.4 nC (1)
- 18 nC (1)
- 18.85 nC (1)
- 185 nC (1)
- 19 nC (1)
- 20 nC (2)
- 23 nC (1)
- 240 nC (1)
- 25 nC (1)
- 27.3 nC (1)
- 31.6 nC (1)
- 33 nC (1)
- 33.5 nC (1)
- 34 nC (1)
- 37 nC (1)
- 40 nC (1)
- 400 nC (2)
- 41 nC (1)
- 42 nC (1)
- 44 nC (1)
- 45 nC (3)
- 45.7 nC (1)
- 47 nC (1)
- 47.1 nC (1)
- 58 nC (2)
- 65.3 nC (2)
- 68 nC (2)
- 9 nC (1)
61 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
20,000
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11.6 A | 10 mOhms | Enhancement | PowerTrench | |||||
|
|
31,540
In-stock
|
onsemi | MOSFET FPS | 12 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 12 A | 10 mOhms | 12 nC, 21 nC | PowerTrench | |||||
|
|
8,295
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 15 nC | Enhancement | OptiMOS | |||
|
|
7,878
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 20 nC | Enhancement | OptiMOS | |||
|
|
5,139
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 71 A | 10 mOhms | 1.2 V | 68 nC | Enhancement | OptiMOS | |||
|
|
863
In-stock
|
IXYS | MOSFET -120 Amps -65V 0.01 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 120 A | 10 mOhms | 58 nC | ||||||
|
|
4,058
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 10 mOhms | 4 V | 44 nC | Enhancement | OptiMOS | |||
|
|
14,078
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | 8 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 11 A | 10 mOhms | 0.8 V | 27.3 nC | Enhancement | ||||
|
|
3,967
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode Fet 60Vdss 20Vgss 60W | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 59 A | 10 mOhms | 1.4 V | 33.5 nC | Enhancement | ||||
|
|
2,500
In-stock
|
Diodes Incorporated | MOSFET 60V 175c N-Ch FET 5.5mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 10 mOhms | 1 V | 47.1 nC | Enhancement | ||||
|
|
2,913
In-stock
|
Fairchild Semiconductor | MOSFET 30V NCH POWER TRENCH SYNCFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 10 mOhms | Enhancement | PowerTrench SyncFET | |||||
|
|
1,318
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 10 mOhms | Enhancement | UniFET | |||||
|
|
678
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 53 A | 10 mOhms | Enhancement | QFET | |||||
|
|
632
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 85 A | 10 mOhms | Enhancement | QFET | |||||
|
|
8,488
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 10 mOhms | Enhancement | QFET | |||||
|
|
4,360
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 20 nC | Enhancement | OptiMOS | |||
|
|
8,494
In-stock
|
onsemi | MOSFET TRENCH 3.1 30V 6 M Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.7 A | 10 mOhms | 1.7 V | 10.8 nC | |||||
|
|
3,485
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 10 mOhms | Enhancement | OptiMOS | |||||
|
|
1,657
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12.5 A | 10 mOhms | - 2.5 V | 33 nC | Enhancement | ||||
|
|
4,594
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 15 nC | Enhancement | OptiMOS | |||
|
|
2,838
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 10 mOhms | Enhancement | OptiMOS | |||||
|
|
424
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 105 A | 10 mOhms | 3 V | 110 nC | Enhancement | ||||
|
|
5,460
In-stock
|
Fairchild Semiconductor | MOSFET 30V 22A 10mOhms N-Ch PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 22 A | 10 mOhms | 2 V | 17 nC | |||||
|
|
2,147
In-stock
|
Diodes Incorporated | MOSFET FET BVDSS 25V 30V P-Ch 0.94W 2246pF | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 15.2 A | 10 mOhms | - 3 V | 41 nC | Enhancement | ||||
|
|
1,880
In-stock
|
Fairchild Semiconductor | MOSFET 30V Asymmetric Dual N-Channel Pwr Trench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 60 A | 10 mOhms | 2 V | 34 nC | Power Stage PowerTrench | ||||
|
|
151
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 10 mOhms | Enhancement | PowerTrench | |||||
|
|
541
In-stock
|
Fairchild Semiconductor | MOSFET 71a 60V 0.014Ohm Logic Level N-Ch | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 75 A | 10 mOhms | Enhancement | ||||||
|
|
364
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 100 V, 0.0085 Ohm typ., 70 A STri... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 10 mOhms | 2.5 V | 45 nC | Enhancement | ||||
|
|
127
In-stock
|
IXYS | MOSFET -120 Amps -65V 0.01 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 120 A | 10 mOhms | 185 nC | Enhancement | |||||
|
|
110
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 0.0085Ohm typ 80A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 10 mOhms | 3.5 V | 45 nC |
