- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Tradename :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,635
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 9.8 mOhms | 1.8 V | 16 nC | NexFET | |||||
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20,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 60A DPAK-2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 9.8 mOhms | 1.1 V | 49 nC | Enhancement | |||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 60A DPAK-2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 9.8 mOhms | 1.1 V | 49 nC | Enhancement | |||||
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537
In-stock
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STMicroelectronics | MOSFET N-Ch 68V 0.0082 Ohm 98 A STripFET II | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 68 V | 98 A | 9.8 mOhms | 4 V | 75 nC | Enhancement | |||||
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58
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 77A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 77 A | 9.8 mOhms | 2.1 V | 60 nC | Enhancement | OptiMOS |