- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
40 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
18,008
In-stock
|
Nexperia | MOSFET 30V N-channel Trench MOSFET | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.2 A | 23 mOhms | 400 mV | 12.4 nC | Enhancement | ||||
|
|
9,470
In-stock
|
Fairchild Semiconductor | MOSFET Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSF... | 12 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 24 V | 7 A | 23 mOhms | 0.9 V | 12 nC | Enhancement | PowerTrench | |||
|
|
4,900
In-stock
|
Fairchild Semiconductor | MOSFET PT8 40/20V N-ch Dual Symmetric | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 23 mOhms | 1.8 V | 7.6 nC | PowerTrench | ||||
|
|
4,122
In-stock
|
Fairchild Semiconductor | MOSFET -30V Dual | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 7 A | 23 mOhms | Enhancement | PowerTrench | |||||
|
|
6,286
In-stock
|
Fairchild Semiconductor | MOSFET 30V Integrated N-Ch PT MOSFET-Schtky Dio | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 23 mOhms | Enhancement | PowerTrench | |||||
|
|
4,853
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 23 mOhms | Enhancement | PowerTrench | |||||
|
|
2,663
In-stock
|
Fairchild Semiconductor | MOSFET 100V 7.5a .22 Ohms/VGS=1V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7.5 A | 23 mOhms | Enhancement | UltraFET | |||||
|
|
6,518
In-stock
|
Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 20 A | 23 mOhms | 3.1 V | 8 nC | PowerTrench | ||||
|
|
1,807
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 23 mOhms | 3.1 V | 6.7 nC | PowerTrench | ||||
|
|
1,901
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 80 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 23 mOhms | Enhancement | ||||||
|
|
7,528
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.5 A | 23 mOhms | PowerTrench | ||||||
|
|
2,792
In-stock
|
Fairchild Semiconductor | MOSFET 25V Dual N-Chanenl | SMD/SMT | MicroFET-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 7 A | 23 mOhms | Enhancement | PowerTrench | ||||||
|
|
1,416
In-stock
|
Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 37 A | 23 mOhms | 3.1 V | 7.6 nC | PowerTrench | ||||
|
|
GET PRICE |
51,300
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 94A 23mOhm 180nCAC | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 94 A | 23 mOhms | 180 nC | Enhancement | ||||
|
|
4,429
In-stock
|
onsemi | MOSFET 30V 7A N-Channel | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 23 mOhms | Enhancement | ||||||
|
|
869
In-stock
|
STMicroelectronics | MOSFET N Ch 100V 0.019Ohm 80A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 23 mOhms | Enhancement | ||||||
|
|
2,710
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PwrTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 23 mOhms | Enhancement | PowerTrench | |||||
|
|
340
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 57A 23mOhm 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 4 V | 130 nC | |||||
|
|
636
In-stock
|
Fairchild Semiconductor | MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 23 mOhms | Enhancement | ||||||
|
|
175
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 98A 23mOhm 160nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 98 A | 23 mOhms | 160 nC | Enhancement | |||||
|
|
760
In-stock
|
IR / Infineon | MOSFET 60V 1 N-CH HEXFET 23mOhms 40nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 48 A | 23 mOhms | 40 nC | Enhancement | |||||
|
|
182
In-stock
|
Diodes Incorporated | MOSFET MOSFET P-CHANNEL SOT-23 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.6 A | 23 mOhms | 15.4 nC | ||||||
|
|
70
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | Enhancement | |||||
|
|
10
In-stock
|
IXYS | MOSFET Trench HiperFETs Power MOSFETs | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 23 mOhms | 5 V | 180 nC | Enhancement | HiPerFET | |||
|
|
8,064
In-stock
|
Texas instruments | MOSFET N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 22 A | 23 mOhms | 1.1 V | 2 nC | NexFET | ||||
|
|
2,026
In-stock
|
Texas instruments | MOSFET 60-V Dual N-Channel Power MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 23 mOhms | 3 V | 7.2 nC | NexFET | ||||
|
|
2,495
In-stock
|
Fairchild Semiconductor | MOSFET 20a 60V 0.027 Ohm | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 23 mOhms | Enhancement | ||||||
|
|
5,447
In-stock
|
Fairchild Semiconductor | MOSFET 20V Single N-Ch 1.5V Specified PowerTrnch | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9.5 A | 23 mOhms | Enhancement | PowerTrench | |||||
|
|
1,160
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 57 A | 23 mOhms | 86.7 nC | Enhancement | |||||
|
|
14,000
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerD3333-8,2K | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.5 A | 23 mOhms | 10.5 nC | Enhancement |
