- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
30 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,556
In-stock
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Fairchild Semiconductor | MOSFET 30V DUAL N-CH. FET 18 MO SO8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.5 A | 17 mOhms | Enhancement | PowerTrench SyncFET | |||||
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4,644
In-stock
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Fairchild Semiconductor | MOSFET 60V Dual N-Channel Power Trench MOSFET | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 8.2 A | 17 mOhms | 7.9 nC, 17 nC | Enhancement | PowerTrench | |||||
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316
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||
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236
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 75A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||
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263
In-stock
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IXYS | MOSFET 650V/145A Ultra Junction X2-Class | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 145 A | 17 mOhms | 2.7 V | 355 nC | Enhancement | HiPerFET | ||||
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16,286
In-stock
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Diodes Incorporated | MOSFET 20V P-CH MOSFET | 8 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 12 A | 17 mOhms | - 0.4 V to - 1 V | 75 nC | Enhancement | ||||
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756
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 75 A | 17 mOhms | 3 V | 150 nC | Enhancement | ||||
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3,059
In-stock
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Infineon Technologies | MOSFET 20V DUAL P-CH HEXFET 17mOhms 38nC | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 12 V | - 9.2 A | 17 mOhms | 38 nC | Enhancement | |||||
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2,556
In-stock
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onsemi | MOSFET Dual N-Channel Full BridgeRectifierUDFN8 | 10 V | SMD/SMT | UDFN-8 | - 55 C | + 125 C | Reel | 2 Channel | Si | N-Channel | 20 V | 2.2 A | 17 mOhms | |||||||
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102
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 75A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||
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100
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | DE-475-6 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 250 V | 100 A | 17 mOhms | 2.5 V | 255 nC | Enhancement | GigaMOS, HiperFET | ||||
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2,750
In-stock
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Fairchild Semiconductor | MOSFET N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 38 A | 17 mOhms | Enhancement | PowerTrench | |||||
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1,951
In-stock
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STMicroelectronics | MOSFET N-Ch 60 V 0.017 Ohm 7.5 A STripFET II | 16 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.5 A | 17 mOhms | Enhancement | ||||||
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430
In-stock
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IXYS | MOSFET MOSFET 650V/150A Ultra Junction X2 | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 150 A | 17 mOhms | 2.7 V | 430 nC | Enhancement | ||||
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2,375
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 15.5mOhms 23nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 9 A | 17 mOhms | 0.8 V to 2 V | 23 nC | Enhancement | ||||
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5,598
In-stock
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Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC | 20 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 9.9 A | 17 mOhms | 1.8 V | 4.3 nC | |||||
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892
In-stock
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STMicroelectronics | MOSFET Automotive-grade P-channel 40 V, 0.013 Ohm typ., 46 A STripF... | +/- 18 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 17 mOhms | - 2.5 V | 65.5 nC | Enhancement | STripFET | |||
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2,319
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 3.7A SOT-23-3 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.7 A | 17 mOhms | 300 mV | 4.7 nC | Enhancement | ||||
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4,836
In-stock
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Fairchild Semiconductor | MOSFET SO-8 P-CH -30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 17 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 20V 3.7A SOT-23-3 | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.7 A | 17 mOhms | 300 mV | 4.7 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 140A 250V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 140 A | 17 mOhms | 5 V | 255 nC | Enhancement | GigaMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||
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VIEW | IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 250V 140A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 140 A | 17 mOhms | 5 V | 255 nC | Enhancement | GigaMOS | |||
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VIEW | Diodes Incorporated | MOSFET Single -30V P-Ch Enh FET -20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13 A | 17 mOhms | - 1 V | 60.4 nC | Enhancement | ||||
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VIEW | Renesas Electronics | MOSFET MP-3ZK PoTr-MOSFET Low | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 36 A | 17 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 200V 120A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 120 A | 17 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 200V 105A | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 105 A | 17 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 200V 120A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 120 A | 17 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 200V 120A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 120 A | 17 mOhms | Enhancement | HyperFET | |||||
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421
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 14mOhms 61nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 61 A | 17 mOhms | 1 V to 3 V | 61 nC | Enhancement |
