- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 1 A (1)
- - 2 A (1)
- - 2.9 A (2)
- - 26 A (2)
- - 3.5 A (1)
- - 3.6 A (1)
- - 3.8 A (1)
- - 36 A (1)
- - 5.8 A (1)
- 1.5 A (2)
- 16 A (1)
- 17 A (2)
- 2.2 A (1)
- 2.6 A (1)
- 2.9 A (2)
- 23 A (1)
- 28 A (1)
- 3 A (1)
- 3.4 A (1)
- 3.5 A (2)
- 31 A (5)
- 33 A (1)
- 35 A (2)
- 36 A (3)
- 37.9 A (6)
- 4.2 A (1)
- 400 A (1)
- 55 A (2)
- 58 A (2)
- 60 A (3)
- 70 A (1)
- 750 mA (2)
- 9 A (1)
- Vgs th - Gate-Source Threshold Voltage :
56 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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10,727
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 3.5 A | 90 mOhms | Enhancement | PowerTrench | |||||
|
|
3,081
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel MOSFET 600V, 3.8A, 2.5Ohm | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 3.4 A | 90 mOhms | 3.7 nC, 6.4 nC | PowerTrench | |||||
|
|
1,499
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 38A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 90 mOhms | 2.5 V | 119 nC | Enhancement | CoolMOS | |||
|
|
1,243
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
564
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 31A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
GET PRICE |
46,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 38A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 90 mOhms | 2.5 V | 119 nC | Enhancement | CoolMOS | ||
|
|
605
In-stock
|
Fairchild Semiconductor | MOSFET 600V NChannel MOSFET SupreMOS | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 90 mOhms | 4 V | 86 nC | SupreMOS | ||||
|
|
869
In-stock
|
Fairchild Semiconductor | MOSFET 600V NChannel MOSFET SupreMOST | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 36 A | 90 mOhms | 4 V | 112 nC | |||||
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|
455
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 31A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
1,433
In-stock
|
STMicroelectronics | MOSFET N-Ch 650 V 0.09 Ohm 28 A MDmesh(TM) M5 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 28 A | 90 mOhms | 3 V | 62.5 nC | Enhancement | MDmesh | |||
|
|
14,120
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 25V-30V,SOT23,3K | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 90 mOhms | 8.2 nC | Enhancement | |||||
|
|
4,284
In-stock
|
Fairchild Semiconductor | MOSFET 20V N-Ch PowerTrench | 8 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 1.5 A | 90 mOhms | Enhancement | PowerTrench | |||||
|
|
20,950
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 17A 90mOhm 24.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 90 mOhms | 4 V | 37 nC | |||||
|
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 38A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 90 mOhms | 2.5 V | 119 nC | Enhancement | CoolMOS | |||
|
|
2,698
In-stock
|
STMicroelectronics | MOSFET N-Ch 60 Volt 16 Amp | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 16 A | 90 mOhms | Enhancement | ||||||
|
|
337
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 38A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 90 mOhms | 2.5 V | 119 nC | Enhancement | CoolMOS | |||
|
|
640
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 240A 1.2mOhm 160nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 400 A | 90 mOhms | 160 nC | Enhancement | ||||||
|
|
GET PRICE |
24,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 38A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 90 mOhms | 2.5 V | 119 nC | Enhancement | CoolMOS | ||
|
|
6,100
In-stock
|
IXYS | MOSFET TrenchP Power MOSFET | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 26 A | 90 mOhms | - 4.5 V | 52 nC | Enhancement | TrenchP | ||||
|
|
200
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 31A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
9,185
In-stock
|
Fairchild Semiconductor | MOSFET 30V 2.9A Dual P Ch PowerTrench | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 2.9 A | 90 mOhms | Enhancement | PowerTrench | |||||
|
|
2,659
In-stock
|
Fairchild Semiconductor | MOSFET 15a 55V N-Channel UltraFET | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 2.6 A | 90 mOhms | Enhancement | UltraFET | |||||
|
|
GET PRICE |
4,760
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 90 mOhms | Enhancement | QFET | ||||
|
|
4,160
In-stock
|
Fairchild Semiconductor | MOSFET 150V P-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 36 A | 90 mOhms | Enhancement | QFET | |||||
|
|
3,804
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 20V N-Chan | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 4.2 A | 90 mOhms | 400 mV | 7 nC | Enhancement | ||||
|
|
151
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 31A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
3,417
In-stock
|
Diodes Incorporated | MOSFET 650mW 30Vdss | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.2 A | 90 mOhms | Enhancement | ||||||
|
|
2,700
In-stock
|
onsemi | MOSFET PFET 2X2 20V 9.5A 42MOHM | 8 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.8 A | 90 mOhms | - 0.67 V | 13 nC | Enhancement | ||||
|
|
1,739
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 2.9A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.9 A | 90 mOhms | 2.1 V | 12 nC | Enhancement | ||||
|
|
139
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 38A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 90 mOhms | 2.5 V | 119 nC | Enhancement | CoolMOS |
