- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,611
In-stock
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onsemi | MOSFET NFET UDFN6 30V 8.7A | 12 V, 12 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 7.3 A, 7.3 A | 17.5 mOhms, 17.5 mOhms | 600 mV, 600 mV | 9 nC, 9 nC | Enhancement | ||||
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3,000
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V, 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 2.5 A, 2.5 A | 39 mOhms, 39 mOhms | 600 mV, 600 mV | 3.2 nC, 3.2 nC | Enhancement | ||||
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597
In-stock
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Diodes Incorporated | MOSFET Dual N-Ch 24V Mosfet 0.98W PD | 12 V, 12 V | SMD/SMT | W-DFN5020-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 24 V, 24 V | 6.5 A, 6.5 A | 11 mOhms, 11 mOhms | 600 mV, 600 mV | 31.3 nC, 31.3 nC | Enhancement | ||||
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9,000
In-stock
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Texas instruments | MOSFET CSD85301Q2 Dual N- Channel Power MOSFET | 10 V, 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 8 A | 23 mOhms, 23 mOhms | 600 mV, 600 mV | 5.4 nC, 5.4 nC | Enhancement | NexFET | |||
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VIEW | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V, 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 2.5 A, 2.5 A | 39 mOhms, 39 mOhms | 600 mV, 600 mV | 3.2 nC, 3.2 nC | Enhancement |
