- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,009
In-stock
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IR / Infineon | MOSFET 60V, 130A, DirectFET 2.9mOhm, 133nC Og | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 130 A | 2.2 mOhms | 3 V | 133 nC | StrongIRFET | ||||
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9,692
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 5 A | 55 mOhms | 3 V | 22.4 nC | Enhancement | ||||
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1,071
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 55 Amp | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 15 mOhms | 3 V | 44.5 nC | Enhancement | ||||
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1,552
In-stock
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Fairchild Semiconductor | MOSFET 60V N Chan Shielded Gate Power Trench | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 56 A | 6.5 mOhms | 3 V | 88 nC | PowerTrench Power Clip | |||||
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8,223
In-stock
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Diodes Incorporated | MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.3 A | 140 mOhms | 3 V | 8.6 nC | Enhancement | ||||
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1,304
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A | 20 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8.9 A | 16 mOhms | 3 V | 17 nC | Enhancement | ||||
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2,483
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch 44mOhm 10V VGS 5.0A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5 A | 44 mOhms | 3 V | 22.4 nC | Enhancement | ||||
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1,768
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 3.3 A | 70 mOhms | 3 V | 12.3 nC | Enhancement | ||||
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1,731
In-stock
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Diodes Incorporated | MOSFET Avalanche | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | 3 V | Enhancement | |||||
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4,915
In-stock
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Diodes Incorporated | MOSFET N-Ch 31V to 99V 60V 120mOhm 606pF | 20 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 120 mOhms | 3 V | 12.3 nC | Enhancement | ||||
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1
In-stock
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onsemi | MOSFET NFET DPAK 60V .150R TR | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 9 A | 122 mOhms | 3 V | 7.1 nC | |||||
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444
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | 3 V | Enhancement | |||||
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48,920
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13 mOhms | 3 V | 14 nC | Enhancement | NexFET | |||
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2,026
In-stock
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Texas instruments | MOSFET 60-V Dual N-Channel Power MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 23 mOhms | 3 V | 7.2 nC | NexFET | ||||
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563
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 200 A | 14 mOhms | 3 V | 14 nC | Enhancement | NexFET | |||
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877
In-stock
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Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13 mOhms | 3 V | 14 nC | Enhancement | NexFET | |||
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445
In-stock
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Texas instruments | MOSFET 60V Dual NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 27 mOhms | 3 V | 7.2 nC | Enhancement | ||||
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26,037
In-stock
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Diodes Incorporated | MOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.3 A | 140 mOhms | 3 V | 8.6 nC | Enhancement | ||||
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25,461
In-stock
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Texas instruments | MOSFET 60-V Dual N-Channel Power MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 16 A | 12.5 mOhms | 3 V | 14 nC | NexFET | ||||
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25,461
In-stock
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Texas instruments | MOSFET 60V Dual NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 16 A | 15 mOhms | 3 V | 14 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 7.6 mOhms | 3 V | 37 nC | Enhancement | OptiMOS | |||
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VIEW | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 2.8 mOhms | 3 V | 96.3 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 8 mOhms | 3 V | 41.3 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 8 mOhms | 3 V | 41.3 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A | 20 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8.9 A | 16 mOhms | 3 V | 17 nC | Enhancement | ||||
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440
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.1 mOhms | 3 V | 206 nC | Enhancement |
