- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Vgs th - Gate-Source Threshold Voltage :
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21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,110
In-stock
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Fairchild Semiconductor | MOSFET 60V/20V Dual Nch Power Trench MOSFET | 20 V | SMD/SMT | PQFN-12 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 4.5 mOhms | 1.5 V | 49 nC | Enhancement | Power Clip | |||
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2,685
In-stock
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Fairchild Semiconductor | MOSFET Common Drain N-Chan Power Trench MOSFET | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 45 A | 6.4 mOhms | 3 V | 49 nC | PowerTrench Power Clip | |||||
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3,367
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | N-Channel | 120 V | 75 A | 9.2 mOhms | 3 V | 49 nC | Enhancement | |||||
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2,700
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 56 A | 12.3 mOhms | 2 V | 49 nC | Enhancement | OptiMOS | |||
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740
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 10 A | 480 mOhms | 49 nC | Enhancement | |||||
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215
In-stock
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STMicroelectronics | MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 520 mOhms | 3.75 V | 49 nC | Enhancement | ||||
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GET PRICE |
47,000
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 75A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 75 A | 11.4 mOhms | 49 nC | OptiMOS | ||||
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363
In-stock
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Infineon Technologies | MOSFET N-Ch 560V 11.6A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 11.6 A | 380 mOhms | 3 V | 49 nC | CoolMOS | ||||
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GET PRICE |
9,830
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 56 A | 12.3 mOhms | 2 V | 49 nC | Enhancement | OptiMOS | ||
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2,637
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 1.45 mOhms | 1.1 V | 49 nC | Enhancement | NexFET | |||
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4,090
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 85A 49nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 85 A | 3.8 mOhms | 2 V to 4 V | 49 nC | Enhancement | ||||
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1,680
In-stock
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Texas instruments | MOSFET 60V NCh NexFET Power MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 3.5 mOhms | 2.8 V | 49 nC | NexFET | ||||
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GET PRICE |
5,500
In-stock
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Toshiba | MOSFET MOSFET NCh6.8ohm VGS10V10uAVDS100V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 40 A | 6.8 mOhms | 2 V to 4 V | 49 nC | Enhancement | ||||
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103
In-stock
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STMicroelectronics | MOSFET N-channel 500 V Zener SuperMESH | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 10 A | 520 mOhms | 49 nC | Enhancement | |||||
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241
In-stock
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Texas instruments | MOSFET 60-V N-Channel NexFET Power Mosfet | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.4 mOhms | 2.4 V | 49 nC | Enhancement | NexFET | |||
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14,957
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 2.1 V | 49 nC | Enhancement | ||||
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15,000
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.5 mOhms | 2.1 V | 49 nC | Enhancement | OptiMOS | |||
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20,000
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 60A DPAK-2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 9.8 mOhms | 1.1 V | 49 nC | Enhancement | ||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 60A DPAK-2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 9.8 mOhms | 1.1 V | 49 nC | Enhancement | ||||
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5,999
In-stock
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Toshiba | MOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 5.5 mOhms | 4 V | 49 nC | Enhancement | ||||
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910
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 45A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 7.9 mOhms | 49 nC | OptiMOS |
