- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,887
In-stock
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onsemi | MOSFET PCH 1.5A 30V SOT-363 | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 1.5 A | 325 mOhms | - 2.6 V | 2.2 nC | |||||
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3,822
In-stock
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onsemi | MOSFET PFET SPCL TR | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 130 mA | 10 Ohms | 2.2 nC | ||||||
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1,997
In-stock
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Texas instruments | MOSFET P-CH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.6 A | 47 mOhms | - 850 mV | 2.2 nC | Enhancement | NexFET | |||
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11,948
In-stock
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onsemi | MOSFET PFET 50V 130MA 10.0 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 50 V | - 130 mA | 10 Ohms | 2.2 nC | ||||||
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GET PRICE |
29,980
In-stock
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Texas instruments | MOSFET 30V Dual N-Ch Common Drain NexFET | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 5.0 A | 42 mOhms | 1.6 V | 2.2 nC | Enhancement | NexFET | ||
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7,761
In-stock
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onsemi | MOSFET PCH 4V Power MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.6 A | 617 mOhms | - 2.6 V | 2.2 nC | Enhancement |
