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39 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,848
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 8.5 mOhms | 2 V | 16 nC | PowerTrench | |||||
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2,434
In-stock
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Fairchild Semiconductor | MOSFET Automotive / SuperFET1 / 600V / 4.6A / 1.05 OHM | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.6 A | 3.2 Ohms | 3 V | 16 nC | Enhancement | SuperFET | ||||
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2,447
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 7.5 A | 17.3 mOhms | 4 V | 16 nC | PowerTrench | |||||
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4,073
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.4 Ohms | 2.1 V | 16 nC | Enhancement | CoolMOS | ||||
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11,481
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 18 A | 3.5 mOhms | 2 V | 16 nC | Enhancement | OptiMOS | ||||
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1,079
In-stock
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STMicroelectronics | MOSFET N-Channel 1000V Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2 A | 8.5 Ohms | 16 nC | Enhancement | ||||||
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5,055
In-stock
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onsemi | MOSFET Single N-Channel 60V,20A,24mohm | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 25 mOhms | 2.5 V | 16 nC | ||||||
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3,582
In-stock
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Fairchild Semiconductor | MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 130 mOhms | 3 V | 16 nC | Enhancement | |||||
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1,538
In-stock
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Fairchild Semiconductor | MOSFET N-CHANNEL MOSFET | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 9.4 A | 14 mOhms | 16 nC | PowerTrench | ||||||
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1,306
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 49 A | 2.8 mOhms | 1.7 V | 16 nC | PowerTrench SyncFET | |||||
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4,739
In-stock
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Infineon Technologies | MOSFET 30V SGL P-CH HEXFET Pwr MOSFET | 25 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 18 mOhms | - 1.8 V | 16 nC | SmallPowIR | |||||
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5,352
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 14.6mOhms 16nC | 25 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 11.7 mOhms | - 1.8 V | 16 nC | Enhancement | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-Channel 1000V Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1000 V | 2 A | 8.5 Ohms | 16 nC | Enhancement | ||||||
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4,970
In-stock
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onsemi | MOSFET NFET U8FL 30V 41A 8MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 37 A | 8.9 mOhms | 1.6 V | 16 nC | ||||||
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975
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 9 A | 395 mOhms | 2 V | 16 nC | Enhancement | ||||||
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754
In-stock
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Fairchild Semiconductor | MOSFET PT5 150V/20V Pch PowerTrench Mosfet | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 2.2 A | 255 mOhms | - 3 V | 16 nC | Enhancement | PowerTrench | ||||
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823
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 9 A | 450 mOhms | 2 V to 4 V | 16 nC | Enhancement | ||||||
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800
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-262-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 9 A | 450 mOhms | 2 V to 4 V | 16 nC | Enhancement | ||||||
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2,690
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL DFN DFN3030-8 GREEN 3K | 8 V | SMD/SMT | U-DFN3030-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 5.2 A | 30 mOhms | 1.1 V | 16 nC | Enhancement | |||||
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13,390
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 16.6 mOhms | 2.6 V | 16 nC | Enhancement | |||||
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10,635
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 9.8 mOhms | 1.8 V | 16 nC | NexFET | |||||
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1,074
In-stock
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Toshiba | MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6 A | 1.25 Ohms | 4 V | 16 nC | Enhancement | |||||
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2,329
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 34A 16nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 34 A | 11 mOhms | 2 V to 4 V | 16 nC | Enhancement | |||||
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200
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 540 mOhms | 3 V | 16 nC | Enhancement | |||||
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366
In-stock
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Toshiba | MOSFET N-Ch MOS 7.5A 500V 35W 700pF 1.04 Ohm | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 7.5 A | 760 mOhms | 4.4 V | 16 nC | |||||||
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175
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.8 A | 530 mOhms | 2.5 V | 16 nC | Enhancement | |||||
|
220
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.8 A | 550 mOhms | 2.5 V | 16 nC | Enhancement | |||||
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195
In-stock
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Toshiba | MOSFET N-Ch MOS 5A 600V 35W 700pF 1.43 Ohm | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 5 A | 1.2 Ohms | 4.4 V | 16 nC | |||||||
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11,993
In-stock
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Siliconix / Vishay | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 4.6 A | 0.068 Ohms | - 2.5 V | 16 nC | Enhancement | |||||
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9,000
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 8V 24V N-Ch Dual 20V 1550pF | 12 V | SMD/SMT | U-DFN2030-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 9 A | 13 mOhms | 0.71 V | 16 nC | Enhancement |