- Manufacture :
- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,485
In-stock
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IR / Infineon | MOSFET MOSFT 250V 83A 21mOhm 195nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 93 A | 17.5 mOhms | 180 nC | Enhancement | |||||
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289
In-stock
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IXYS | MOSFET Standard Linear Power MOSFETs | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 80 A | 32 mOhms | 180 nC | Enhancement | |||||||
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GET PRICE |
51,300
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 94A 23mOhm 180nCAC | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 94 A | 23 mOhms | 180 nC | Enhancement | |||||
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255
In-stock
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IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | - 2 V to - 4 V | 180 nC | Enhancement | |||||
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294
In-stock
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IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | Enhancement | |||||||
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306
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 90A 4.5mOhm 180nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 90 A | 4.5 mOhms | 4 V | 180 nC | ||||||
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75
In-stock
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IXYS | MOSFET Trench HiperFET Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 86 A | 43 mOhms | 5 V | 180 nC | Enhancement | Trench, HiperFET | ||||
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84
In-stock
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IXYS | MOSFET MOSFET 650V/100A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 100 A | 30 mOhms | 2.7 V | 180 nC | Enhancement | |||||
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30
In-stock
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IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET | ||||
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10
In-stock
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IXYS | MOSFET Trench HiperFETs Power MOSFETs | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 23 mOhms | 5 V | 180 nC | Enhancement | HiPerFET | ||||
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210
In-stock
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Toshiba | MOSFET DTMOSIV 600V 40mOhm 61.8A 400W 6500pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 61.8 A | 33 mOhms | 2.7 V to 3.7 V | 180 nC | DTMOSIV |