- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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9,379
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.2 mOhms | 1.2 V | 52 nC | Enhancement | ||||
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1,822
In-stock
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onsemi | MOSFET NFET SO8FL 60V 289A 1.2MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 276 A | 1.2 mOhms | 2 V | 52 nC | |||||
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2,574
In-stock
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Infineon Technologies | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 21 mOhms | 52 nC | Enhancement | |||||
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4,829
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2 mOhms | 1.2 V | 52 nC | Enhancement | ||||
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12,500
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 21A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 150 mOhms | 2.5 V | 52 nC | Enhancement | CoolMOS | |||
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4,760
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2 mOhms | 1.2 V | 52 nC | Enhancement | ||||
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2,566
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.8 mOhms | 1 V | 52 nC | Enhancement | OptiMOS | |||
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1,474
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 52nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12.5 A | 13 mOhms | 1 V | 52 nC | Enhancement | ||||
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1,188
In-stock
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onsemi | MOSFET TRENCH 6 60V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 150 A | 2 mOhms | 1.2 V | 52 nC | Enhancement | ||||
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6,100
In-stock
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IXYS | MOSFET TrenchP Power MOSFET | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 26 A | 90 mOhms | - 4.5 V | 52 nC | Enhancement | TrenchP | ||||
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1,757
In-stock
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Vishay Semiconductors | MOSFET 50V 50A 75W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 50 V | 50 A | 0.009 Ohms | 1.5 V | 52 nC | Enhancement | TrenchFET | |||
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1,894
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.2 mOhms | 1.2 V | 52 nC | Enhancement | OptiMOS | |||
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300
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 21A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 150 mOhms | 2.5 V | 52 nC | Enhancement | CoolMOS | |||
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1,934
In-stock
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Texas instruments | MOSFET 40-V N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.3 mOhms | 1.8 V | 52 nC | NexFET | ||||
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5,230
In-stock
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Texas instruments | MOSFET 40-V, N-Chanel NxFT Pwr MOSFETs | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.3 mOhms | 1.8 V | 52 nC | NexFET | ||||
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502
In-stock
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Texas instruments | MOSFET 40-V, N-Channel NexFET? Power MOSFET 8-VSON-CLI... | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.3 mOhms | 1.5 V | 52 nC | Enhancement | NexFET | |||
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4,000
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 2.5mOhms 52nC | 12 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 40 A | 2.5 mOhms | 0.5 V to 1.1 V | 52 nC | Enhancement | ||||
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3,374
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 A | 150 mOhms | 2.5 V | 52 nC | Enhancement | CoolMOS | |||
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4,933
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.8 mOhms | 1.2 V | 52 nC | Enhancement | ||||
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10,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.8 mOhms | 1.2 V | 52 nC | Enhancement | OptiMOS | |||
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GET PRICE |
28,300
In-stock
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onsemi | MOSFET TRENCH 6 60V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 150 A | 3.3 mOhms | 1.2 V | 52 nC | Enhancement | |||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 21 A | 150 mOhms | 2.5 V | 52 nC | Enhancement | CoolMOS | |||
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4,825
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 2.8 mOhms | 1 V | 52 nC | Enhancement | OptiMOS | |||
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4,535
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.2 mOhms | 1.2 V | 52 nC | Enhancement | OptiMOS | |||
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VIEW | IXYS | MOSFET MOSFET P-CH 200V 26A TO-220 | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 26 A | 90 mOhms | - 4.5 V | 52 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms | 16 V | SMD/SMT | DirectFET-M4 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 112 A | 4.3 mOhms | 52 nC | Enhancement | ||||||
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189
In-stock
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Toshiba | MOSFET N-Ch 88A 140W FET 120V 3100pF 52nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 120 V | 88 A | 7.8 mOhms | 2 V to 4 V | 52 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET MOSFET NCh7.8ohm VGS10V10uAVDS120V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 42 A | 7.8 mOhms | 2 V to 4 V | 52 nC | Enhancement | ||||
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1,617
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 52nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 12.5 A | 13 mOhms | 1 V | 52 nC | Enhancement |
