- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Applied Filters :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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30
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | +/- 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 40 A | 145 mOhms | 3.5 V | 98 nC | Enhancement | HiPerFET | |||
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669
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 650V, 110mohm, FRFET | 20 V, 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 3 V | 98 nC | Enhancement | SuperFET II FRFET | |||
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615
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 650V, 110mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 5 V | 98 nC | Enhancement | SuperFET II FRFET | |||
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2,400
In-stock
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Infineon Technologies | MOSFET MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 5.8 mOhms | 1.1 V | 98 nC | Enhancement | ||||
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3,324
In-stock
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IR / Infineon | MOSFET 40V 85A 3.3mOhm 65nC StrongIRFET | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 40 V | 117 A | 3.3 mOhms | 3.9 V | 98 nC | Enhancement | StrongIRFET | |||||
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224
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 650V, 110 mOhm, FRFET | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 5 V | 98 nC | Enhancement | ||||
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1,128
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS | |||
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GET PRICE |
8,700
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.056 Ohm 42 A Mdmesh | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 42 A | 56 mOhms | 4 V | 98 nC | Enhancement | MDmesh | ||
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236
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 89A 10mOhm 65.3nC LogLvl | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 89 A | 18 mOhms | 2 V | 98 nC | |||||
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961
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS | |||
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51
In-stock
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STMicroelectronics | MOSFET N-chanel 650 V 0.056 Ohm typ 42 A | 25 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 42 A | 63 mOhms | 4 V | 98 nC | ||||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS | |||
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1,990
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET 8-VSON-CLI... | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.3 mOhms | 1.3 V | 98 nC | Enhancement | ||||
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3,990
In-stock
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Texas instruments | MOSFET 100V N-CH NexFET Pwr MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 150 A | 2.8 mOhms | 2.2 V | 98 nC | Enhancement | ||||
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2,900
In-stock
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Siliconix / Vishay | MOSFET 650V Vds 250W Pd +/-30V Vds E Series | 30 V | Through Hole | TO-220AB-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 40 A | 57 mOhms | 3 V | 98 nC | Enhancement | |||||
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3,962
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS | |||
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250
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET 8-VSON-CLI... | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.3 mOhms | 1.3 V | 98 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET MOSFET | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 5.8 mOhms | 1.1 V | 98 nC | Enhancement |
