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-
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- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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- Channel Mode :
- Tradename :
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- CoolMOS (46)
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- UltraFET (6)
328 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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81
In-stock
|
IXYS | MOSFET 60V/220A TrenchT3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | |||
|
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12,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 70 mOhms | Enhancement | CoolMOS | |||||
|
|
2,483
In-stock
|
IXYS | MOSFET -48.0 Amps -200V 0.085 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 48 A | 85 mOhms | - 4 V | 103 nC | Enhancement | PolarP | |||
|
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2,193
In-stock
|
Fairchild Semiconductor | MOSFET 75a 55V NCh UltraFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 75 A | 8 mOhms | Enhancement | UltraFET | |||||
|
|
23,630
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 49A 40mOhm 156nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 40 mOhms | 156 nC | Enhancement | |||||
|
|
1,704
In-stock
|
Fairchild Semiconductor | MOSFET Trans MOS N-Ch 55V 75A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 75 A | 7 mOhms | Enhancement | UltraFET | |||||
|
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711
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.7 mOhms | Enhancement | PowerTrench | |||||
|
|
373
In-stock
|
Fairchild Semiconductor | MOSFET 600V, 52A, 72mOhm N-Channel Mosfet | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 65 mOhms | 165 nC | Enhancement | SuperFET II FRFET | ||||
|
|
GET PRICE |
4,485
In-stock
|
IR / Infineon | MOSFET MOSFT 250V 83A 21mOhm 195nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 93 A | 17.5 mOhms | 180 nC | Enhancement | ||||
|
|
583
In-stock
|
Fairchild Semiconductor | MOSFET 75a 100VN-Ch MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 8 mOhms | Enhancement | UltraFET | |||||
|
|
537
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37 A | 275 mOhms | 3 V | 109 nC | Enhancement | SuperFET II | |||
|
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480
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 600V Fast ver | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 75 A | 43 mOhms | 3.5 V | 163 nC | Enhancement | SuperFET II | |||
|
|
464
In-stock
|
Fairchild Semiconductor | MOSFET 650V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 54 A | 184 mOhms | 3 V | 126 nC | Enhancement | SuperFET II | |||
|
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485
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/500V/50A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 89 mOhms | 5 V | 105 nC | |||||
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384
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 195 mOhms | 3 V | 160 nC | Enhancement | SuperFET II | |||
|
|
605
In-stock
|
Fairchild Semiconductor | MOSFET 650V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 76 A | 96 mOhms | 3 V | 234 nC | Enhancement | SuperFET II | |||
|
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471
In-stock
|
Infineon Technologies | MOSFET N-Ch 560V 32A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 32 A | 110 mOhms | Enhancement | CoolMOS | |||||
|
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277
In-stock
|
Infineon Technologies | MOSFET N-Ch 850V 54.9A TO247-3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 54.9 A | 77 mOhms | 2.1 V | 288 nC | Enhancement | ||||
|
|
307
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 34.6A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 34.6 A | 81 mOhms | 2.1 V | 200 nC | Enhancement | CoolMOS | |||
|
|
494
In-stock
|
IXYS | MOSFET -10 Amps -600V 1 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 600 V | - 10 A | 1 Ohms | Enhancement | ||||||
|
|
227
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 47 A | 70 mOhms | Enhancement | CoolMOS | |||||
|
|
1,088
In-stock
|
IXYS | MOSFET 140 Amps 300V 0.024 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 140 A | 24 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | |||
|
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437
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 15A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 15 A | 340 mOhms | Enhancement | CoolMOS | |||||
|
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305
In-stock
|
IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | ||||
|
|
590
In-stock
|
IXYS | MOSFET LinearL2 Powr MOSFET w/extended FBSOA | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | |||||||
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867
In-stock
|
IXYS | MOSFET -90.0 Amps -100V 25 mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 90 A | 25 mOhms | |||||||
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213
In-stock
|
IXYS | MOSFET High Voltage Power MOSFET; 2500V, 0.2A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 2500 V | 200 mA | 450 Ohms | 4.5 V | 7.4 nC | Enhancement | ||||||
|
|
502
In-stock
|
IXYS | MOSFET 230A 200V | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 230 A | 7.5 mOhms | Enhancement | ||||||
|
|
756
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 75 A | 17 mOhms | 3 V | 150 nC | Enhancement | ||||
|
|
299
In-stock
|
Infineon Technologies | MOSFET N-Ch 850V 54.9A TO247-3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 54.9 A | 77 mOhms | 2.1 V | 288 nC | Enhancement | CoolMOS |
