- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
-
- 10 A (1)
- 10.6 A (2)
- 100 A (1)
- 11 A (2)
- 110 A (1)
- 12 A (2)
- 120 A (1)
- 13.8 A (4)
- 14 A (1)
- 14.1 A (2)
- 15 A (1)
- 150 A (1)
- 16 A (2)
- 17 A (1)
- 17.3 A (1)
- 20.2 A (7)
- 200 A (2)
- 21 A (2)
- 23 A (2)
- 23.8 A (2)
- 24.8 A (2)
- 25 A (4)
- 29 A (1)
- 3.2 A (2)
- 31 A (2)
- 343 A (1)
- 36 A (1)
- 37.9 A (2)
- 38 A (2)
- 44 A (1)
- 56 A (1)
- 57.7 A (4)
- 7.3 A (2)
- 8 A (1)
- 8.1 A (2)
- 80 A (2)
- 9 A (2)
- 9.2 A (2)
- Rds On - Drain-Source Resistance :
-
- 0.003 Ohms (2)
- 0.012 Ohms (1)
- 0.041 Ohms (1)
- 1.26 Ohms (2)
- 1.4 mOhms (1)
- 105 mOhms (1)
- 110 mOhms (3)
- 125 mOhms (1)
- 140 mOhms (2)
- 150 mOhms (2)
- 165 mOhms (1)
- 170 mOhms (10)
- 180 mOhms (2)
- 2.2 mOhms (1)
- 2.5 mOhms (1)
- 220 mOhms (3)
- 24 mOhms (1)
- 250 mOhms (4)
- 270 mOhms (2)
- 280 mOhms (1)
- 290 mOhms (1)
- 340 mOhms (2)
- 350 mOhms (4)
- 4.5 mOhms (1)
- 400 mOhms (1)
- 410 mOhms (2)
- 470 mOhms (2)
- 5.6 mOhms (1)
- 540 mOhms (2)
- 650 mOhms (1)
- 67 mOhms (5)
- 7.5 mOhms (1)
- 850 mOhms (1)
- 89 mOhms (2)
- 90 mOhms (4)
- Qg - Gate Charge :
-
- 103 nC (1)
- 108 nC (1)
- 118 nC (1)
- 119 nC (2)
- 120 nC (1)
- 127 nC (2)
- 135 nC (1)
- 138 nC (4)
- 150 nC (1)
- 190 nC (1)
- 22 nC (3)
- 23 nC (2)
- 23.4 nC (2)
- 24.8 nC (2)
- 27 nC (1)
- 28 nC (2)
- 29 nC (2)
- 30 nC (1)
- 32 nC (2)
- 35 nC (2)
- 40 nC (1)
- 42 nC (1)
- 43 nC (5)
- 45 nC (3)
- 46.8 nC (1)
- 47.2 nC (2)
- 50 nC (1)
- 52 nC (2)
- 57 nC (2)
- 58 nC (1)
- 60 nC (1)
- 63 nC (2)
- 70 nC (2)
- 73 nC (4)
- 75 nC (3)
- 78 nC (2)
- 80 nC (2)
- 9.4 nC (2)
- 94 nC (1)
72 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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3,279
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
|
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1,039
In-stock
|
Fairchild Semiconductor | MOSFET 800V 8A NChn MOSFET SuperFET II, FRFET | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 850 mOhms | 2.5 V | 22 nC | Enhancement | SuperFET II | |||
|
|
3,130
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 343A 1.7mOhm 108nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 343 A | 1.4 mOhms | 2.5 V | 108 nC | |||||
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1,535
In-stock
|
Fairchild Semiconductor | MOSFET 800V 10A NChn MOSFET SuperFET II | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 650 mOhms | 2.5 V | 27 nC | Enhancement | SuperFET II | |||
|
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812
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 400mohm | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 400 mOhms | 2.5 V | 43 nC | Enhancement | SuperFET II | |||
|
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1,240
In-stock
|
Fairchild Semiconductor | MOSFET 650V 44A N-Channel SuperFET MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 44 A | 67 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | |||
|
|
799
In-stock
|
Fairchild Semiconductor | MOSFET 800V SuperFET2 N-Chnl Mosfet | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 17 A | 290 mOhms | 2.5 V | 58 nC | Enhancement | SuperFET II | |||
|
|
1,097
In-stock
|
Fairchild Semiconductor | MOSFET 600V 29A N-Chnl SuperFET Easy-Drive | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 29 A | 125 mOhms | 2.5 V | 75 nC | Enhancement | SuperFET II | |||
|
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702
In-stock
|
Fairchild Semiconductor | MOSFET 800V 23A N-Channel SuperFET II MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 23 A | 220 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET II | |||
|
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564
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 31A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
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3,370
In-stock
|
Infineon Technologies | MOSFET N-Ch 500V 18.5A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24.8 A | 170 mOhms | 2.5 V | 47.2 nC | Enhancement | CoolMOS | |||
|
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864
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 23.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | |||
|
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12,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 21A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 150 mOhms | 2.5 V | 52 nC | Enhancement | CoolMOS | |||
|
|
573
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 57.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 57.7 A | 67 mOhms | 2.5 V | 138 nC | Enhancement | CoolMOS | |||
|
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455
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 31A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
385
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 57.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 57.7 A | 67 mOhms | 2.5 V | 138 nC | Enhancement | CoolMOS | |||
|
|
500
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 25A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
|
|
632
In-stock
|
Fairchild Semiconductor | MOSFET 20.2A 600V MOSFET | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 57 nC | SuperFET II | ||||
|
|
307
In-stock
|
Fairchild Semiconductor | MOSFET 600V 23A N-Chnl SuperFET Easy-Drive | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23 A | 165 mOhms | 2.5 V | 57 nC | Enhancement | SuperFET II | |||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 650V 38A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 90 mOhms | 2.5 V | 119 nC | Enhancement | CoolMOS | |||
|
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GET PRICE |
7,840
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 20.2A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | ||
|
|
GET PRICE |
15,260
In-stock
|
STMicroelectronics | MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Powe... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 80 V | 110 A | 5.6 mOhms | 2.5 V | 150 nC | Enhancement | ||||
|
|
906
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 12A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | |||
|
|
442
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 25A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
|
|
456
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 16A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
|
|
536
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 12A TO220-3 CoolMOS CP | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | |||
|
|
500
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 20.2A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.2 A | 170 mOhms | 2.5 V | 73 nC | Enhancement | CoolMOS | |||
|
|
340
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 38A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | |||
|
|
349
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 38A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | |||
|
|
481
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.003 Ohms | 2.5 V | 190 nC | Enhancement | TrenchFET |
