- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,465
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | +/- 8 V, +/- 8 V | SMD/SMT | PowerDI5060-C-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 12 V, - 20 V | 9.5 A, 8.7 A | 9 mOhms, 14 mOhms | 600 mV, - 1 V | 32 nC, 56 nC | Enhancement | |||
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1,500
In-stock
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Diodes Incorporated | MOSFET 40V 175c N-Ch FET 8.6mOhm 10Vgs 45A | 20 V | SMD/SMT | PowerDI5060-C-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.9 mOhms | 2 V | 41.9 nC | Enhancement | |||
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2,265
In-stock
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Diodes Incorporated | MOSFET Enh FET 12Vdss 8Vgss 20V Complementary | 8 V | SMD/SMT | PowerDI5060-C-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 12 V | 9.5 A, 6.9 A | 17 mOhms, 32 mOhms | 0.6 V to 1.5 V | 18.6 nC | Enhancement |
