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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$4.850
RFQ
525
In-stock
STMicroelectronics MOSFET N-CH 500V 14A TO-247 TO-247-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -50°C ~ 150°C (TJ) Not For New Designs TO-247-3 0 1 N-Channel - 500V 14A (Tc) 340 mOhm @ 7A, 10V 4.5V @ 100µA 106nC @ 10V 2260pF @ 25V 10V ±30V 160W (Tc)
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Per Unit
$4.530
RFQ
914
In-stock
STMicroelectronics MOSFET N-CH 500V 14A TO-220 TO-220-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -50°C ~ 150°C (TJ) Active TO-220AB 0 1 N-Channel - 500V 14A (Tc) 340 mOhm @ 7A, 10V 4.5V @ 100µA 106nC @ 10V 2260pF @ 25V 10V ±30V 160W (Tc)
STW10NK80Z
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RFQ
12,500
In-stock
STMicroelectronics MOSFET N-CH 800V 9A TO-247 TO-247-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247-3 0 1 N-Channel - 800V 9A (Tc) 900 mOhm @ 4.5A, 10V 4.5V @ 100µA 72nC @ 10V 2180pF @ 25V 10V ±30V 160W (Tc)
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Per Unit
$4.370
RFQ
899
In-stock
STMicroelectronics MOSFET N-CH 1000V 6.5A TO-220 TO-220-3 SuperMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220AB 0 1 N-Channel - 1000V 6.5A (Tc) 1.85 Ohm @ 3.15A, 10V 4.5V @ 100µA 102nC @ 10V 2180pF @ 25V 10V ±30V 160W (Tc)
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