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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N CH 40V 195A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET®, StrongIRFET™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 1 N-Channel - 40V 195A (Tc) 1.8 mOhm @ 100A, 10V 3.9V @ 150µA 225nC @ 10V 7330pF @ 25V 6V, 10V ±20V 230W (Tc)
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Infineon Technologies MOSFET N CH 40V 195A D2PAK-7PIN TO-263-8, D²Pak (7 Leads + Tab), TO-263CA HEXFET®, StrongIRFET™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK (7-Lead) 0 1 N-Channel - 40V 195A (Tc) 1.4 mOhm @ 100A, 10V 3.9V @ 150µA 225nC @ 10V 7437pF @ 25V 6V, 10V ±20V 231W (Tc)
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Infineon Technologies MOSFET N CH 40V 100A PQFN5X6 8-VQFN Exposed Pad HEXFET®, StrongIRFET™ Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel - 40V 100A (Tc) 1.4 mOhm @ 100A, 10V 3.9V @ 150µA 194nC @ 10V 6419pF @ 25V 6V, 10V ±20V 156W (Tc)
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Per Unit
$2.190
RFQ
320
In-stock
Infineon Technologies MOSFET N CH 40V 195A TO-262 TO-262-3 Long Leads, I²Pak, TO-262AA HEXFET®, StrongIRFET™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Active TO-262 0 1 N-Channel - 40V 195A (Tc) 1.8 mOhm @ 100A, 10V 3.9V @ 150µA 225nC @ 10V 7330pF @ 25V 6V, 10V ±20V 230W (Tc)
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