- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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44
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | 10V | ±20V | 3.8W (Ta), 300W (Tc) | |||||
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898
In-stock
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Infineon Technologies | MOSFET N-CH 200V 31A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 107nC @ 10V | 2370pF @ 25V | 10V | ±30V | 3.1W (Ta), 200W (Tc) | |||||
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48
In-stock
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Infineon Technologies | MOSFET N-CH 200V 24A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 200V | 24A (Tc) | 77.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | 144W (Tc) | |||||
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638
In-stock
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Infineon Technologies | MOSFET N-CH 200V 18A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | 150W (Tc) | |||||
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1,062
In-stock
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Infineon Technologies | MOSFET N-CH 200V 72A D2-PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 200V | 72A (Tc) | 22 mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | 10V | ±20V | 375W (Tc) | |||||
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365
In-stock
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Infineon Technologies | MOSFET N-CH 200V 62A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 200V | 62A (Tc) | 26 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V | 330W (Tc) | |||||
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283
In-stock
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Infineon Technologies | MOSFET NCH 200V 72A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, HEXFET® | Tube | MOSFET (Metal Oxide) | - | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | 0 | 1 | N-Channel | - | 200V | 72A (Tc) | 22 mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | 10V | ±20V | 375W (Tc) |