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Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$5.180
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RFQ
STMicroelectronics MOSFET N-CH 1700V 2.6A TO247-3 TO-247-3 PowerMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-247-3 0 1 N-Channel - 1700V 2.6A (Tc) 13 Ohm @ 1.3A, 10V 5V @ 250µA 44nC @ 10V 1100pF @ 100V 10V ±30V 160mW
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Per Unit
$5.010
VIEW
RFQ
STMicroelectronics MOSFET N-CH 1700V 2.6A ISOWATT218FX PowerMESH™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active ISOWATT-218FX 0 1 N-Channel - 1700V 2.6A (Tc) 13 Ohm @ 1.3A, 10V 5V @ 250µA 44nC @ 10V 1100pF @ 100V 10V ±30V 63W (Tc)
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