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Part Status :
Supplier Device Package :
Power - Max :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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RFQ
Infineon Technologies MOSFET 2P-CH 55V 3.4A 8SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Cut Tape (CT) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 2 P-Channel (Dual) 2W Logic Level Gate 55V 3.4A 105 mOhm @ 3.4A, 10V 1V @ 250µA 38nC @ 10V 690pF @ 25V
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RFQ
onsemi MOSFET 2N-CH 40V 3.4A 8-SOIC 8-SOIC (0.154", 3.90mm Width) - Cut Tape (CT) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SOIC 0 1 2 N-Channel (Dual) 1.39W Logic Level Gate 40V 3.4A 80 mOhm @ 3.4A, 10V 3V @ 250µA 28nC @ 10V 900pF @ 32V
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Per Unit
$1.390
RFQ
3,451
In-stock
Infineon Technologies MOSFET 2P-CH 55V 3.4A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 2 P-Channel (Dual) 2W Logic Level Gate 55V 3.4A 105 mOhm @ 3.4A, 10V 1V @ 250µA 38nC @ 10V 690pF @ 25V
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