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- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 160A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 30V | 160A (Tc) | 3.1 mOhm @ 25A, 10V | 2.35V @ 100µA | 59nC @ 4.5V | 4880pF @ 15V | 4.5V, 10V | ±20V | 135W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 160A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 40V | 160A (Tc) | 1.6 mOhm @ 160A, 10V | 4V @ 250µA | 260nC @ 10V | 6930pF @ 25V | 10V | ±20V | 330W (Tc) | ||||
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In-stock
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Infineon Technologies | MOSFET N-CH 55V 160A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK (7-Lead) | 0 | 1 | N-Channel | - | 55V | 160A (Tc) | 2.6 mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | 7820pF @ 25V | 10V | ±20V | 300W (Tc) | ||||
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186
In-stock
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Infineon Technologies | MOSFET N-CH 75V 75A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 75V | 160A (Tc) | 4.5 mOhm @ 75A, 10V | 4V @ 250µA | 270nC @ 10V | 7500pF @ 25V | 10V | ±20V | 300W (Tc) | ||||
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2,989
In-stock
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Infineon Technologies | MOSFET N-CH 40V 160A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 1 | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | 200W (Tc) | |||
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1,118
In-stock
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Infineon Technologies | MOSFET N-CH 40V 160A TO220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | 200W (Tc) | |||
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2,713
In-stock
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Infineon Technologies | MOSFET N-CH 40V 160A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 40V | 160A (Tc) | 4 mOhm @ 95A, 10V | 3V @ 250µA | 140nC @ 5V | 6590pF @ 25V | 4.3V, 10V | ±20V | 200W (Tc) | |||
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5,781
In-stock
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Infineon Technologies | MOSFET N-CH 30V 160A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | N-Channel | - | 30V | 160A (Tc) | 3.1 mOhm @ 25A, 10V | 2.35V @ 100µA | 59nC @ 4.5V | 4880pF @ 15V | 4.5V, 10V | ±20V | 135W (Tc) | |||
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2,207
In-stock
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Infineon Technologies | MOSFET N-CH 75V 75A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 75V | 160A (Tc) | 4.5 mOhm @ 75A, 10V | 4V @ 250µA | 270nC @ 10V | 7500pF @ 25V | 10V | ±20V | 300W (Tc) |
