- Package / Case :
- Mounting Type :
- Part Status :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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518
In-stock
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Infineon Technologies | MOSFET N-CH 60V 57A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | D2PAK | 0 | 1 | N-Channel | - | 60V | 57A (Tc) | 12 mOhm @ 34A, 10V | 4V @ 250µA | 65nC @ 10V | 1690pF @ 25V | 10V | ±20V | 92W (Tc) | |||
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5,350
In-stock
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Infineon Technologies | MOSFET N-CH 100V 57A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | 200W (Tc) | |||
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3,942
In-stock
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Infineon Technologies | MOSFET N-CH 100V 57A TO-247AC | TO-247-3 | HEXFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 100V | 57A (Tc) | 25 mOhm @ 28A, 10V | 4V @ 250µA | 190nC @ 10V | 3000pF @ 25V | 10V | ±20V | 200W (Tc) | |||
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1,412
In-stock
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Infineon Technologies | MOSFET N-CH 60V 57A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 60V | 57A (Tc) | 12 mOhm @ 34A, 10V | 4V @ 250µA | 65nC @ 10V | 1690pF @ 25V | 10V | ±20V | 92W (Tc) |
