- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
700
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 48A TO-220AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | 60V | 48A (Tc) | 23 mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | 1360pF @ 25V | 10V | ±20V | 110W (Tc) | |||
|
|
|
2,173
In-stock
|
onsemi | MOSFET N-CH 60V 48A TO-220AB | - | Tube | MOSFET (Metal Oxide) | Through Hole | -65°C ~ 175°C (TJ) | Active | TO-220-3 | 0 | 1 | N-Channel | 60V | 48A (Tc) | 20 mOhm @ 24A, 10V | 2V @ 250µA | 60nC @ 5V | 2000pF @ 25V | 5V, 10V | ±16V | 100W (Tc) |
