- Manufacture :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
-
- 13.5 mOhm @ 36A, 10V (2)
- 14 mOhm @ 38A, 10V (2)
- 14.5 mOhm @ 36A, 10V (1)
- 16 mOhm @ 32A, 10V (1)
- 18 mOhm @ 33A, 10V (1)
- 20 mOhm @ 42A, 10V (2)
- 27 mOhm @ 25A, 10V (1)
- 36 mOhm @ 22A, 10V (1)
- 36 mOhm @ 23A, 10V (1)
- 4.9 mOhm @ 42A, 10V (1)
- 63 mOhm @ 21A, 10V (3)
- 7.5 mOhm @ 42A, 10V (1)
- 70 mOhm @ 21A, 10V (1)
- 75 mOhm @ 17A, 10V (2)
- 8 mOhm @ 42A, 10V (1)
- Vgs(th) (Max) @ Id :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
- Applied Filters :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,605
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 55V | 42A (Tc) | 13.5 mOhm @ 36A, 10V | 3V @ 250µA | 35nC @ 5V | 1570pF @ 25V | 4.5V, 10V | ±16V | 110W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 100V | 42A (Tc) | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 4.5V, 10V | ±16V | 140W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 55V | 42A (Tc) | 7.5 mOhm @ 42A, 10V | 4V @ 100µA | 95nC @ 10V | 2840pF @ 25V | 10V | ±20V | 140W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 100V | 42A (Tc) | 18 mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | 2930pF @ 25V | 10V | ±20V | 140W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 75V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 75V | 42A (Tc) | 16 mOhm @ 32A, 10V | 4V @ 100µA | 75nC @ 10V | 2190pF @ 25V | 10V | ±20V | 110W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 1 | N-Channel | - | 55V | 42A (Tc) | 14.5 mOhm @ 36A, 10V | 4V @ 250µA | 44nC @ 10V | 1380pF @ 25V | 10V | ±20V | 110W (Tc) | |||
|
|
|
VIEW | STMicroelectronics | MOSFET N-CH 300V 42A TO247 | TO-247-3 | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 300V | 42A (Tc) | 75 mOhm @ 17A, 10V | 4V @ 250µA | 90nC @ 10V | 3200pF @ 25V | 10V | ±20V | 300W (Tc) | |||
|
|
|
300
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 40V | 42A (Tc) | 4.9 mOhm @ 42A, 10V | 2.5V @ 100µA | 56nC @ 4.5V | 3810pF @ 25V | 4.5V, 10V | ±16V | 140W (Tc) | ||||
|
|
|
56
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 55V | 42A (Tc) | 8 mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | 2900pF @ 25V | 4.5V, 10V | ±16V | 130W (Tc) | ||||
|
|
|
876
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 55V | 42A (Tc) | 27 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 4V, 10V | ±16V | 110W (Tc) | ||||
|
|
|
44
In-stock
|
STMicroelectronics | MOSFET N CH 650V 42A TO247-4 | TO-247-4 | MDmesh™ V | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-247-4L | 0 | 1 | N-Channel | - | 650V | 42A (Tc) | 63 mOhm @ 21A, 10V | 5V @ 250µA | 98nC @ 10V | 4200pF @ 100V | 10V | ±25V | 250W (Tc) | |||
|
|
GET PRICE |
9,070
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 42A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 100V | 42A (Tc) | 36 mOhm @ 23A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | 160W (Tc) | ||
|
|
|
925
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 42A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | N-Channel | - | 100V | 42A (Tc) | 14 mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | 3980pF @ 25V | 4.5V, 10V | ±16V | 140W (Tc) | |||
|
|
|
448
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 42A I-PAK | TO-251-3 Short Leads, IPak, TO-251AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | IPAK (TO-251) | 0 | 1 | N-Channel | - | 55V | 42A (Tc) | 13.5 mOhm @ 36A, 10V | 3V @ 250µA | 35nC @ 5V | 1570pF @ 25V | 4.5V, 10V | ±16V | 110W (Tc) | |||
|
|
|
724
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 42A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 100V | 42A (Tc) | 36 mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | 1900pF @ 25V | 10V | ±20V | 160W (Tc) | |||
|
|
|
11,348
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 42A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | D2PAK | 0 | 1 | P-Channel | - | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V | 170W (Tc) | ||||
|
|
|
575
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 42A TO-247 | TO-247-3 | MDmesh™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 Long Leads | 0 | 1 | N-Channel | - | 600V | 42A (Tc) | 70 mOhm @ 21A, 10V | 4V @ 250µA | 70nC @ 10V | 3060pF @ 100V | 10V | ±25V | 300W (Tc) | |||
|
|
|
2,200
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 42A TO-247 | TO-247-3 | MDmesh™ V | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-247 | 0 | 1 | N-Channel | - | 650V | 42A (Tc) | 63 mOhm @ 21A, 10V | 5V @ 250µA | 98nC @ 10V | 4200pF @ 100V | 10V | ±25V | 250W (Tc) | |||
|
|
|
150
In-stock
|
STMicroelectronics | MOSFET N CH 300V 42A TO-220 | TO-220-3 | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 175°C (TJ) | Active | TO-220 | 0 | 1 | N-Channel | - | 300V | 42A (Tc) | 75 mOhm @ 17A, 10V | 4V @ 250µA | 90nC @ 10V | 3200pF @ 25V | 10V | ±20V | 300W (Tc) | |||
|
|
|
3,148
In-stock
|
Infineon Technologies | MOSFET P-CH 55V 42A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-262 | 0 | 1 | P-Channel | - | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V | 170W (Tc) | |||
|
|
|
880
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 42A TO-220 | TO-220-3 | MDmesh™ V | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-220 | 0 | 1 | N-Channel | - | 650V | 42A (Tc) | 63 mOhm @ 21A, 10V | 5V @ 250µA | 98nC @ 10V | 4200pF @ 100V | 10V | ±25V | 250W (Tc) |
