- Manufacture :
- Series :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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490
In-stock
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Infineon Technologies | MOSFET N-CH 800V 7A TO220-3 | TO-220-3 | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO220-3 | 0 | 1 | N-Channel | - | 800V | 7A (Tc) | 750 mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17nC @ 10V | 460pF @ 500V | 10V | ±20V | 51W (Tc) | |||
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183
In-stock
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STMicroelectronics | N-CHANNEL 800 V, 0.75 OHM TYP., | TO-220-3 | MDmesh™ K5 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220 | 0 | 1 | N-Channel | - | 900V | 7A (Tc) | 810 mOhm @ 4A, 10V | 5V @ 100µA | 17.7nC @ 10V | 425pF @ 10V | 10V | ±30V | 110W (Tc) | |||
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1,054
In-stock
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STMicroelectronics | MOSFET N-CH 600V 7A TO-220 | TO-220-3 | SuperMESH™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 600V | 7A (Tc) | 950 mOhm @ 3.5A, 10V | 4.5V @ 100µA | 53nC @ 10V | 1110pF @ 25V | 10V | ±30V | 125W (Tc) |
