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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.240
RFQ
948
In-stock
Infineon Technologies MOSFET NCH 600V 9.9A TO220 TO-220-3 Full Pack CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -40°C ~ 150°C (TJ) Active PG-TO220 Full Pack 0 1 N-Channel Super Junction 600V 9.9A (Tc) 650 mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5nC @ 10V 440pF @ 100V 10V ±20V 28W (Tc)
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Per Unit
$1.270
RFQ
1,000
In-stock
Infineon Technologies MOSFET N CH 500V 9.9A PGTO220 TO-220-3 CoolMOS™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO-220-3 0 1 N-Channel Super Junction 500V 9.9A (Tc) 380 mOhm @ 3.2A, 13V 3.5V @ 260µA 24.8nC @ 10V 584pF @ 100V 13V ±20V 73W (Tc)
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