- Manufacture :
- Series :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VIEW | Infineon Technologies | MOSFET P-CH 55V 12A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | P-Channel | - | 55V | 12A (Tc) | 175 mOhm @ 7.2A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | 3.8W (Ta), 45W (Tc) | |||||
|
11
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 12A TO220 | TO-220-3 | MDmesh™ M2 | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-220 | 0 | 1 | N-Channel | - | 650V | 12A (Tc) | 330 mOhm @ 6A, 10V | 4V @ 250µA | 20nC @ 10V | 770pF @ 100V | 10V | ±25V | 110W (Tc) | ||||
|
862
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 12A TO-220 | TO-220-3 | MDmesh™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | TO-220AB | 0 | 1 | N-Channel | - | 650V | 12A (Tc) | 380 mOhm @ 6A, 10V | 4V @ 250µA | 45nC @ 10V | 1300pF @ 50V | 10V | ±25V | 125W (Tc) | ||||
|
493
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 12A TO-220FP | TO-220-3 Full Pack | MDmesh™ M2 | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-220FP | 0 | 1 | N-Channel | - | 600V | 12A (Tc) | 320 mOhm @ 6A, 10V | 4V @ 250µA | 19nC @ 10V | 700pF @ 100V | 10V | ±25V | 25W (Tc) | ||||
|
488
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 12A TO-220FP | TO-220-3 Full Pack | MDmesh™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220FP | 0 | 1 | N-Channel | - | 650V | 12A (Tc) | 380 mOhm @ 6A, 10V | 4V @ 250µA | 33.3nC @ 10V | 983pF @ 50V | 10V | ±25V | 30W (Tc) | ||||
|
350
In-stock
|
STMicroelectronics | MOSFET N-CH 650V I2PAK-FP | TO-262-3 Full Pack, I²Pak | MDmesh™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | I2PAKFP (TO-281) | 0 | 1 | N-Channel | - | 650V | 12A (Tc) | 380 mOhm @ 6A, 10V | 4V @ 250µA | 33.3nC @ 10V | 983pF @ 50V | 10V | ±25V | 30W (Tc) | ||||
|
839
In-stock
|
STMicroelectronics | MOSFET N-CH 650V 12A TO-220 | TO-220-3 | MDmesh™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220 | 0 | 1 | N-Channel | - | 650V | 12A (Tc) | 380 mOhm @ 6A, 10V | 4V @ 250µA | 33.3nC @ 10V | 983pF @ 50V | 10V | ±25V | 125W (Tc) | ||||
|
2,884
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 12A TO220FP | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB Full-Pak | 0 | 1 | N-Channel | - | 100V | 12A (Tc) | 110 mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | 640pF @ 25V | 10V | ±20V | 41W (Tc) |