- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | STMicroelectronics | MOSFET N CH 100V 110A TO-220 | TO-220-3 | DeepGATE™, STripFET™ VII | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220 | 0 | 1 | N-Channel | - | 100V | 110A (Tc) | 7 mOhm @ 55A, 10V | 4V @ 250µA | 60nC @ 10V | 5500pF @ 50V | 10V | ±20V | 150W (Tc) | |||
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700
In-stock
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Infineon Technologies | MOSFET N-CH 60V 48A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 60V | 48A (Tc) | 23 mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | 1360pF @ 25V | 10V | ±20V | 110W (Tc) | |||
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600
In-stock
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STMicroelectronics | MOSFET N-CH 600V 20A TO-247 | TO-247-3 | MDmesh™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Active | TO-247-3 | 0 | 1 | N-Channel | - | 600V | 20A (Tc) | 165 mOhm @ 10A, 10V | 4V @ 250µA | 60nC @ 10V | 1800pF @ 50V | 10V | ±30V | 140W (Tc) |
