- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 190A D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1 | N-Channel | - | 100V | 190A (Tc) | 4 mOhm @ 110A, 10V | 4V @ 250µA | 230nC @ 10V | 9830pF @ 50V | 10V | ±20V | 380W (Tc) | |||||
|
1,100
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 38A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-262 | 0 | 1 | P-Channel | - | 100V | 38A (Tc) | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | 10V | ±20V | 3.1W (Ta), 170W (Tc) | ||||
|
2,177
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 75A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 55V | 75A (Tc) | 4.7 mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | 5110pF @ 25V | 10V | ±20V | 330W (Tc) |