- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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1,823
In-stock
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Infineon Technologies | MOSFET N-CH 75V 120A TO-247AC | TO-247-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | 0 | 1 | N-Channel | - | 75V | 120A (Tc) | 3.3 mOhm @ 75A, 10V | 4V @ 250µA | 220nC @ 10V | 9400pF @ 50V | 10V | ±20V | 340W (Tc) | |||
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140,900
In-stock
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Infineon Technologies | MOSFET N-CH 75V 140A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 75V | 140A (Tc) | 7 mOhm @ 82A, 10V | 4V @ 250µA | 220nC @ 10V | 5310pF @ 25V | 10V | ±20V | 330W (Tc) | |||
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GET PRICE |
19,830
In-stock
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Infineon Technologies | MOSFET N-CH 200V 56A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | 0 | 1 | N-Channel | - | 200V | 56A (Tc) | 40 mOhm @ 34A, 10V | 4V @ 250µA | 220nC @ 10V | 4220pF @ 25V | 10V | ±20V | 380W (Tc) |
