- Manufacture :
- Series :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 180A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 100V | 180A (Tc) | 4.7 mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | 9575pF @ 50V | 10V | ±20V | 375W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 60V | 195A (Tc) | 2.5 mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | 8970pF @ 50V | 10V | ±20V | 375W (Tc) | |||
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874
In-stock
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STMicroelectronics | MOSFET N-CH 500V 18A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | MDmesh™ II | Tube | MOSFET (Metal Oxide) | Through Hole | 150°C (TJ) | Obsolete | I2PAK | 0 | 1 | N-Channel | - | 500V | 18A (Tc) | 190 mOhm @ 9A, 10V | 4V @ 250µA | 65nC @ 10V | 1950pF @ 25V | 10V | ±25V | 140W (Tc) | |||
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687
In-stock
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STMicroelectronics | MOSFET N-CH 100V 80A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | I2PAK | 0 | 1 | N-Channel | - | 100V | 80A (Tc) | 23 mOhm @ 40A, 10V | 4V @ 250µA | 104nC @ 10V | 4270pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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168
In-stock
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Infineon Technologies | MOSFET N-CH 200V 18A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | 150W (Tc) | |||
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547
In-stock
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Infineon Technologies | MOSFET N-CH 100V 36A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 100V | 36A (Tc) | 26.5 mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | 10V | ±20V | 92W (Tc) | |||
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236
In-stock
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Infineon Technologies | MOSFET N-CH 40V 195A TO262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 40V | 195A (Tc) | 2 mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | 6450pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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973
In-stock
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STMicroelectronics | MOSFET N-CH 55V 80A I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA | STripFET™ II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | I2PAK | 0 | 1 | N-Channel | - | 55V | 80A (Tc) | 6.5 mOhm @ 40A, 10V | 4V @ 250µA | 189nC @ 10V | 4400pF @ 25V | 10V | ±20V | 300W (Tc) | |||
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1,100
In-stock
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Infineon Technologies | MOSFET P-CH 100V 38A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-262 | 0 | 1 | P-Channel | - | 100V | 38A (Tc) | 60 mOhm @ 38A, 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | 10V | ±20V | 3.1W (Ta), 170W (Tc) | |||
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2,048
In-stock
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Infineon Technologies | MOSFET N-CH 40V 162A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 40V | 162A (Tc) | 4 mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | 7360pF @ 25V | 10V | ±20V | 3.8W (Ta), 200W (Tc) | |||
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5,396
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-262 | 0 | 1 | N-Channel | - | 55V | 51A (Tc) | 13.9 mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | 10V | ±20V | 80W (Tc) | |||
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3,148
In-stock
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Infineon Technologies | MOSFET P-CH 55V 42A TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-262 | 0 | 1 | P-Channel | - | 55V | 42A (Tc) | 20 mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | 10V | ±20V | 170W (Tc) |
